SCHEMBL19853088

SCHEMBL19853088

O=S(=O)(O)c1c(C2CCCCC2)cc(C2CCCC(C3CCC(c4cc(O)cc(C5CCCC5)c4S(=O)(=O)O)C3)C2)cc1C1CCCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24859823 0.92 KDM4E (0.30)
SCHEMBL19849825 0.84 ESR1 (0.31)
SCHEMBL3529059 0.82 LMNA (0.33)
SCHEMBL2758391 0.82 HSP90AA1 (0.38)
SCHEMBL18133725 0.82 HSP90AA1 (0.38)
SCHEMBL18031578 0.81 ESR1 (0.37)
SCHEMBL2758386 0.79 KMO (0.38)
SCHEMBL683462 0.79 KMO (0.38)
SCHEMBL2758385 0.79 KMO (0.38)
SCHEMBL22005483 0.78 DEGS1 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11124477-B2 Sulfonium compound, positive resist composition, and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-21 US disclosed
US-10725377-B2 Chemically amplified negative resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-28 US disclosed
US-20200071268-A1 SULFONIUM COMPOUND, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-03-05 US disclosed
US-10416558-B2 Positive resist composition, resist pattern forming process, and photomask blank SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-09-17 US disclosed
US-20180180998-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-28 US disclosed
US-20180039177-A1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 US disclosed