SCHEMBL353184

SCHEMBL353184

COc1cc(C(=O)c2ccc(O)c(O)c2O)ccc1O

nearest known ligand 0.72

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC22A6 Q4U2R8 1/20 0.72
SLC22A8 Q8TCC7 1/20 0.72
MEN1 O00255 2/20 0.62
KMT2A Q03164 2/20 0.62
RAB9A P51151 1/20 0.62
HTT P42858 1/20 0.60
MAPT P10636 6/20 0.58
KDM4E B2RXH2 6/20 0.58
HSD17B10 Q99714 4/20 0.58
ALDH1A1 P00352 4/20 0.58
HPGD P15428 3/20 0.58
RECQL P46063 3/20 0.58
MAPK1 P28482 2/20 0.58
CYP3A4 P08684 2/20 0.58
LMNA P02545 1/20 0.58
TDP1 Q9NUW8 1/20 0.58
HDAC1 Q13547 1/20 0.57
ALOX15 P16050 4/20 0.54
HSD17B2 P37059 1/20 0.53
ALOX12 P18054 1/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29670589 1.00 SLC22A6 (0.72) SLC22A6SLC22A8MEN1KMT2ARAB9A
SCHEMBL19003423 0.87 HDAC1 (0.72) SLC22A6SLC22A8MEN1KMT2ARAB9A
SCHEMBL19003376 0.86 HDAC1 (0.60) SLC22A6SLC22A8MAPTKDM4EHSD17B10
SCHEMBL15814046 0.84 SLC22A6 (1.00) SLC22A6SLC22A8MEN1KMT2ARAB9A
SCHEMBL18127697 0.83 ALDH1A1 (0.69) SLC22A6SLC22A8MEN1KMT2ARAB9A
SCHEMBL29215760 0.80 CYP3A4 (0.60) SLC22A6SLC22A8MEN1KMT2ARAB9A
SCHEMBL93601 0.80 MAPT (0.69) MEN1KMT2ARAB9AHTTMAPT
SCHEMBL9639006 0.80 MAPT (0.65) SLC22A6SLC22A8MEN1KMT2ARAB9A
SCHEMBL7369813 0.80 SLC22A6 (0.89) SLC22A6SLC22A8MEN1KMT2ARAB9A
SCHEMBL5703332 0.79 HDAC1 (0.75) MEN1KMT2AMAPTKDM4EHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 82 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101355056-B Method for manufacturing thin film transistor substrate and photosensitive composition used in the substrate SAMSUNG DISPLAY CO LTD 2014-02-26 CN claimed
US-8278021-B2 Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-10-02 US claimed
US-20090030103-A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-01-29 US claimed
US-6686120-B2 THERMAL ACID GENERATOR AND A METHOD OF FORMING A PATTERN USING THE SAME. THE PHOTORESIST COMPOSITION INCLUDES ABOUT 100 PARTS BY WEIGHT OF AN ALKALI-SOLUBLE ACRYL COPOLYMER, ABOUT 5-100 PARTS BY WEIGHT OF 1,2-QUINONEDIAZIDE COMPOUND, ABOUT SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-03 US claimed
US-20030134222-A1 Photoresist composition and method of forming pattern using the same SAMSUNG ELECTRONICS CO., LTD. 2003-07-17 US claimed
EP-4131622-B1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG ENERGY SOLUTION LTD (KR) 2026-01-28 EP disclosed
US-12424705-B2 Separator for lithium secondary battery, method for manufacturing same, and lithium secondary battery comprising same LG ENERGY SOLUTION, LTD. (KR) 2025-09-23 US disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
US-20230098650-A1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG ENERGY SOLUTION, LTD. (KR) 2023-03-30 US disclosed
EP-4131622-A1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG Energy Solution, Ltd. (KR) 2023-02-08 EP disclosed
WO-2023007972-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION 日産化学株式会社 2023-02-02 WO disclosed
WO-2023007941-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SPECIFIC COPOLYMER 日産化学株式会社 2023-02-02 WO disclosed
EP-0633499-A1 Radiation sensitive resist composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-01-11 EP disclosed
EP-0365318-B1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1994-03-16 EP disclosed
US-5238775-A Alkali-soluble resin and photoinitiator comprising a 1,2-quinone diazide sulfonate derivative of 1,1-bis (hydroxyphenyl)-1-(4-(4-hydroxybenzyl)ethanes; positive photoresists; heat resistance; inhibits scum JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1993-08-24 US disclosed
EP-0554101-A1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1993-08-04 EP disclosed
EP-0496640-A1 I-ray sensitive positive resist composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1992-07-29 EP disclosed
US-5110706-A Photoresists for highly reflective substrates JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1992-05-05 US disclosed
EP-0443820-A2 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1991-08-28 EP disclosed
EP-0428398-A2 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1991-05-22 EP disclosed