SCHEMBL35443

SCHEMBL35443

CCN([SiH3])CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ammonia Solution, Strong SCHEMBL28213257 0.95
Diethylamine SCHEMBL15105159 0.82 TP53 (0.53)
SCHEMBL1047729 0.79
SCHEMBL18991387 0.76
SCHEMBL2876580 0.74
SCHEMBL3978918 0.71
SCHEMBL2269522 0.71
SCHEMBL4861233 0.71
SCHEMBL3129601 0.70
SCHEMBL35656 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1186 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4748968-A1 METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS Hansol Chemical Co., Ltd (KR) 2026-05-27 EP claimed
US-12628578-B2 Substrate processing method ASM IP HOLDING B.V. (NL) 2026-05-12 US claimed
US-12546000-B2 Substrate processing method ASM IP HOLDING B.V. (NL) 2026-02-10 US claimed
US-20260035783-A1 SIN FILM EMBEDDING METHOD AND FILM FORMATION APPARATUS TOKYO ELECTRON LTD (JP) 2026-02-05 US claimed
US-12540387-B2 Simultaneous selective deposition of two different materials on two different surfaces ASM IP HOLDING B.V. (NL) 2026-02-03 US claimed
US-20260028712-A1 SIMULTANEOUS SELECTIVE DEPOSITION OF TWO DIFFERENT MATERIALS ON TWO DIFFERENT SURFACES ASM IP HOLDING BV (NL) 2026-01-29 US claimed
US-20260002264-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING BV (NL) 2026-01-01 US claimed
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-20250297360-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-09-25 US claimed
US-12392038-B2 Thin-film deposition method and system ASM IP HOLDING B.V. (NL) 2025-08-19 US claimed
EP-2144279-A2 Aminosilanes for shallow trench isolation films Air Products and Chemicals, Inc. (US) 2010-01-13 EP claimed
CN-101472931-A Organometallic compounds PRAXAIR TECHNOLOGY INC (US) 2009-07-01 CN claimed
US-7442822-B2 Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-10-28 US claimed
EP-1967609-A2 Plasma enhanced cyclic chemical vapor deposition of silicon-containing films Air Products and Chemicals, Inc. (US) 2008-09-10 EP claimed
US-20080207007-A1 Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-08-28 US claimed
US-20080142046-A1 Thermal F2 etch process for cleaning CVD chambers AIR PRODUCTS AND CHEMICALS, INC. 2008-06-19 US claimed
EP-1932941-A1 Thermal etch process for cleaning CVD chambers Air Products and Chemicals, Inc. (US) 2008-06-18 EP claimed
CN-101171366-A Method of forming silicon oxide containing films AIR LIQUIDE (FR) 2008-04-30 CN claimed
US-20080058541-A1 Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins VERSUM MATERIALS US, LLC 2008-03-06 US claimed
EP-1894934-A1 Stabilization of Nitrogen-Containing and Oxygen-Containing Organosilanes Using Weakly Basic Ion-Exchange Resins Air Products and Chemicals, Inc. (US) 2008-03-05 EP claimed