SCHEMBL4861233

SCHEMBL4861233

CCN([SiH3])CC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14237010 0.83 CA12 (0.35)
SCHEMBL18991299 0.77
SCHEMBL29771278 0.75
SCHEMBL35443 0.71
SCHEMBL9287377 0.71 DNM1 (0.39)
SCHEMBL1047729 0.69
Ammonia Solution, Strong SCHEMBL28213257 0.68
SCHEMBL806005 0.67
SCHEMBL35704 0.67 CYP1A2 (0.46)
Hydrochloric Acid SCHEMBL11597307 0.65 CYP1A2 (0.43)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101587304-B Pattern transferring method SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION (CN) 2011-11-30 CN claimed
CN-101640170-A Photoetching method capable of reducing width of exposure pattern SEMICONDUCTOR MFG INT SHANGHAI 2010-02-03 CN claimed
CN-101587304-A Pattern transferring method SEMICONDUCTOR MFG INT BEIJING (CN) 2009-11-25 CN claimed
CN-115216055-A Preparation method of perfume volatilization medium graphite core rod 浙江美之源化妆品有限公司 2022-10-21 CN disclosed
CN-109427619-A Substrate processing method using same and substrate board treatment 株式会社斯库林集团 2019-03-05 CN disclosed
CN-101452225-B Developing method for photoresist mask pattern SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (CN) 2011-12-07 CN disclosed
CN-101587304-B Pattern transferring method SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION (CN) 2011-11-30 CN disclosed
CN-101640170-A Photoetching method capable of reducing width of exposure pattern SEMICONDUCTOR MFG INT SHANGHAI 2010-02-03 CN disclosed
CN-101587304-A Pattern transferring method SEMICONDUCTOR MFG INT BEIJING (CN) 2009-11-25 CN disclosed
CN-101458460-A Photoresist silicification method and method for forming photoresist mask pattern SEMICONDUCTOR MFG INT SHANGHAI (CN) 2009-06-17 CN disclosed
CN-101452225-A Developing method for photoresist mask pattern SEMICONDUCTOR MFG INT SHANGHAI (CN) 2009-06-10 CN disclosed
US-7419763-B2 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2008-09-02 US disclosed
CN-101110348-A Surface treatment, classification and assembly method of microelectronic element and storage structure thereof UMC CORP (CN) 2008-01-23 CN disclosed
US-20070141483-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2007-06-21 US disclosed
US-20060078818-A1 Near-field exposure photoresist and fine pattern forming method using the same CANON KABUSHIKI KAISHA (JP) 2006-04-13 US disclosed
EP-1059314-B1 A resist composition WAKO PURE CHEM IND LTD (JP) 2004-12-22 EP disclosed
US-6716573-B2 Resist Composition WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2004-04-06 US disclosed
US-20030039920-A1 Resist composition WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2003-02-27 US disclosed
US-6432608-B1 FINENESS PATTERN WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2002-08-13 US disclosed
EP-1059314-A1 A resist composition Wako Pure Chemical Industries, Ltd. (JP) 2000-12-13 EP disclosed