⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12855521 | 0.96 | — | — | |
| Arsenic SCHEMBL8837430 | 0.92 | — | — | |
| SCHEMBL28815136 | 0.80 | — | — | |
| SCHEMBL18856261 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL19439573 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL5088015 | 0.75 | — | — | |
| SCHEMBL11692782 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL142595 | 0.72 | — | — | |
| Ammonia Solution, Strong SCHEMBL11282987 | 0.72 | — | — | |
| SCHEMBL9721109 | 0.72 | ALDH1A1 (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1621927-B1 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20160370701-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-9465292-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160187780-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-9316912-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-20150205205-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORP (JP) | 2015-07-23 | — | — | US | disclosed |
| US-8828643-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2014-09-09 | — | — | US | disclosed |
| US-20130177850-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-07-11 | — | — | US | disclosed |
| US-8426109-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-20120015293-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-8039197-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2011-10-18 | — | — | US | disclosed |
| US-20090181323-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-07-16 | — | — | US | disclosed |
| US-7531287-B2 | Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure | FUJIFILM CORPORATION (JP) | 2009-05-12 | — | — | US | disclosed |
| EP-1621927-A2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | Fuji Photo Film Co., Ltd. (JP) | 2006-02-01 | — | — | EP | disclosed |
| US-20060008736-A1 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJI PHOTO FILM CO., LTD. | 2006-01-12 | — | — | US | disclosed |