Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PLA2G7 | Q13093 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 4/20 | 0.36 |
| ▸ | CES1 | P23141 | 1/20 | 0.34 |
| ▸ | PDE4A | P27815 | 1/20 | 0.32 |
| ▸ | PDE4B | Q07343 | 1/20 | 0.32 |
| ▸ | PDE4C | Q08493 | 1/20 | 0.32 |
| ▸ | PDE4D | Q08499 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | KAT6A | Q92794 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.31 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.31 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL297051 | 1.00 | PLA2G7 (0.43) | PLA2G7MAPTCES1PDE4APDE4B | |
| SCHEMBL18431383 | 0.94 | PLA2G7 (0.36) | PLA2G7MAPT | |
| SCHEMBL9891190 | 0.94 | PLA2G7 (0.36) | PLA2G7MAPT | |
| SCHEMBL9891195 | 0.91 | PLA2G7 (0.36) | PLA2G7MAPTPDE4APDE4BPDE4C | |
| SCHEMBL18431387 | 0.91 | PLA2G7 (0.36) | PLA2G7MAPTPDE4APDE4BPDE4C | |
| SCHEMBL26068450 | 0.91 | PLA2G7 (0.36) | PLA2G7MAPTPDE4APDE4BPDE4C | |
| SCHEMBL14375144 | 0.88 | PLA2G7 (0.33) | PLA2G7MAPTALDH1A1LMNA | |
| SCHEMBL17109491 | 0.88 | PLA2G7 (0.33) | PLA2G7MAPT | |
| SCHEMBL18090886 | 0.88 | PLA2G7 (0.32) | PLA2G7PKML3MBTL1 | |
| SCHEMBL107127 | 0.87 | CA2 (0.34) | PLA2G7MAPTCES1POLBKMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 775 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6042988-A | ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-03-28 | — | — | US | claimed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-120044752-A | Photosensitive resin composition | 东京应化工业株式会社 | 2025-05-27 | — | — | CN | disclosed |
| CN-119452307-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2025-02-14 | — | — | CN | disclosed |
| CN-119422108-A | Resist composition and method for forming resist film using same | 三菱瓦斯化学株式会社 | 2025-02-11 | — | — | CN | disclosed |
| CN-117769684-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2024-03-26 | — | — | CN | disclosed |
| CN-117716290-A | Resist composition and method for forming resist film using the same | 三菱瓦斯化学株式会社 | 2024-03-15 | — | — | CN | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-6022666-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-02-08 | — | — | US | disclosed |
| US-5976760-A | Chemical-sensitization resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-11-02 | — | — | US | disclosed |
| US-5928837-A | Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-07-27 | — | — | US | disclosed |
| US-5929271-A | Compounds for use in a positive-working resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-07-27 | — | — | US | disclosed |
| US-5925495-A | Photoresist laminate and method for patterning using the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-07-20 | — | — | US | disclosed |
| US-5902713-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-05-11 | — | — | US | disclosed |
| US-5817444-A | POLYHYDROXYSTYRENE SUBSTITUTED WITH TETRAHYDROPYRAN GROUPS, POLYHYDROXYSTYRENE SUBSTITUTED WITH ALKOXYALKYL GROUPS | TOKYO OHKA KOGYO CO., LTD. (JP) | 1998-10-06 | — | — | US | disclosed |
| EP-0848289-A1 | Negative-working chemical sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1998-06-17 | — | — | EP | disclosed |
| EP-0821274-A1 | Chemical-sensitization resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1998-01-28 | — | — | EP | disclosed |
| EP-0780729-A1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1997-06-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | PLA2G7 1574/4885MAPT 1634/4885CES1 2563/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.