SCHEMBL3608043

SCHEMBL3608043

CC(=NOC(=O)Cc1ccccc1)c1ccc2ccccc2c1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 4/20 0.55
SMN1; SMN2 Q16637 4/20 0.55
TDP1 Q9NUW8 3/20 0.55
THRB P10828 1/20 0.55
XDH P47989 1/20 0.53
MAPK1 P28482 1/20 0.51
ALDH1A1 P00352 2/20 0.50
PPARG P37231 1/20 0.50
PPARA Q07869 1/20 0.50
MEN1 O00255 1/20 0.48
KMT2A Q03164 1/20 0.48
CYP1A2 P05177 1/20 0.47
CYP3A4 P08684 1/20 0.47
CYP2C19 P33261 1/20 0.47
PLAU P00749 1/20 0.47
MAPT P10636 3/20 0.46
LMNA P02545 1/20 0.46
ALOX12 P18054 1/20 0.46
GRIN1 Q05586 1/20 0.46
GRIN2B Q13224 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31667880 1.00 L3MBTL1 (0.55) L3MBTL1SMN1; SMN2TDP1THRBXDH
SCHEMBL11963967 1.00 L3MBTL1 (0.55) L3MBTL1SMN1; SMN2TDP1THRBXDH
SCHEMBL31667879 1.00 L3MBTL1 (0.55) L3MBTL1SMN1; SMN2TDP1THRBXDH
SCHEMBL11963984 0.92 ALDH1A1 (0.48) L3MBTL1SMN1; SMN2TDP1THRBXDH
SCHEMBL12726824 0.91 L3MBTL1 (0.61) L3MBTL1SMN1; SMN2TDP1THRBXDH
SCHEMBL12715742 0.86 PPARG (0.54) SMN1; SMN2ALDH1A1PPARGPPARAMEN1
SCHEMBL11963949 0.85 PPARG (0.50) SMN1; SMN2ALDH1A1PPARGPPARAMEN1
SCHEMBL1357968 0.84 L3MBTL1 (0.60) L3MBTL1SMN1; SMN2TDP1THRBXDH
SCHEMBL1507583 0.84 L3MBTL1 (0.60) L3MBTL1SMN1; SMN2TDP1THRBXDH
SCHEMBL11963961 0.84 L3MBTL1 (0.60) L3MBTL1SMN1; SMN2TDP1THRBXDH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8367190-B2 At low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same LG CHEM, LTD. (KR) 2013-02-05 US claimed
US-20100080973-A1 LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEM, LTD. (KR) 2010-04-01 US claimed
WO-2008035890-A9 AT LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEMICAL LTD (KR) 2009-04-23 WO claimed
WO-2008035890-A1 AT LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEM, LTD. (KR) 2008-03-27 WO claimed
US-6743572-B2 OVERCOATING WITH ZONES OF FILM FORMING POLYMER; HEATING PHOTORESISTS; DEVELOPMENT INFINEON TECHNOLOGIES AG (DE) 2004-06-01 US claimed
US-20020187436-A1 Method for structuring a photoresist layer POLARIS INNOVATIONS LIMITED (IE) 2002-12-12 US claimed
EP-3374467-B1 COMPOSITIONS OF PHOTO-ALIGNABLE MATERIALS ROLIC TECH AG (CH) 2020-04-15 EP disclosed
US-20180320072-A1 COMPOSITIONS OF PHOTO-ALIGNABLE MATERIALS Rolic Technologies AG (CH) 2018-11-08 US disclosed
EP-3374467-A1 COMPOSITIONS OF PHOTO-ALIGNABLE MATERIALS ROLIC Technologies AG (CH) 2018-09-19 EP disclosed
WO-2017080977-A1 COMPOSITIONS OF PHOTO-ALIGNABLE MATERIALS ROLIC AG (CH) 2017-05-18 WO disclosed
US-20130126860-A1 THIN FILM TRANSISTOR SUBSTRATE DAI NIPPON PRINTING CO., LTD. (JP) 2013-05-23 US disclosed
US-20130126860-A1 THIN FILM TRANSISTOR SUBSTRATE DAI NIPPON PRINTING CO., LTD. (JP) 2013-05-23 US disclosed
US-8367190-B2 At low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same LG CHEM, LTD. (KR) 2013-02-05 US disclosed
US-7572555-B2 Hologram recording material, hologram recording method and optical recording medium FUJIFILM CORPORATION (JP) 2009-08-11 US disclosed
US-7531667-B2 Two-photon absorption dye-containing material, three-dimensional refractive index modulation material, three-dimensional absorption index modulation material and three-dimensional optical recording material FUJIFILM CORPORATION (JP) 2009-05-12 US disclosed
US-7531667-B2 Two-photon absorption dye-containing material, three-dimensional refractive index modulation material, three-dimensional absorption index modulation material and three-dimensional optical recording material FUJIFILM CORPORATION (JP) 2009-05-12 US disclosed
US-20070207390-A1 Hologram recording material and hologram recording method FUJIFILM CORPORATION (JP) 2007-09-06 US disclosed
US-20070207390-A1 Hologram recording material and hologram recording method FUJIFILM CORPORATION (JP) 2007-09-06 US disclosed
US-6743572-B2 OVERCOATING WITH ZONES OF FILM FORMING POLYMER; HEATING PHOTORESISTS; DEVELOPMENT INFINEON TECHNOLOGIES AG (DE) 2004-06-01 US disclosed
US-20020187436-A1 Method for structuring a photoresist layer POLARIS INNOVATIONS LIMITED (IE) 2002-12-12 US disclosed