SCHEMBL3617840

SCHEMBL3617840

CCCCCCCCO[SiH2][SiH3]

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 2/20 0.42
TSHR P16473 1/20 0.42
CA1 P00915 7/20 0.41
CA2 P00918 7/20 0.41
CA9 Q16790 7/20 0.41
CA12 O43570 3/20 0.41
MEN1 O00255 1/20 0.39
HTT P42858 1/20 0.39
KMT2A Q03164 1/20 0.39
MAPT P10636 1/20 0.39
LPAR3 Q9UBY5 6/20 0.38
LPAR2 Q9HBW0 5/20 0.38
LPAR1 Q92633 2/20 0.38
NAAA Q02083 1/20 0.38
CA3 P07451 1/20 0.38
CA4 P22748 1/20 0.38
CA6 P23280 1/20 0.38
CA5A P35218 1/20 0.38
CA7 P43166 1/20 0.38
CA14 Q9ULX7 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27802253 1.00
SCHEMBL17255112 0.91 HTT (0.48) THRBTSHRCA1CA2CA9
SCHEMBL4079964 0.89
SCHEMBL8769921 0.78 THRB (0.47) THRBTSHRCA1CA2CA9
SCHEMBL8769324 0.78 THRB (0.47) THRBTSHRCA1CA2CA9
SCHEMBL27462289 0.78 THRB (0.47) THRBTSHRCA1CA2CA9
SCHEMBL4075618 0.77
SCHEMBL9823190 0.76 THRB (0.44) THRBTSHRCA1CA2CA9
SCHEMBL8208864 0.76 THRB (0.44) THRBTSHRCA1CA2CA9
SCHEMBL661576 0.76 THRB (0.44) THRBTSHRCA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
US-8703395-B2 Pattern-forming method JSR CORPORATION (JP) 2014-04-22 US disclosed
US-20130107235-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 US disclosed
WO-2013061601-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 WO disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
US-20130084394-A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL JSR CORPORATION (JP) 2013-04-04 US disclosed
US-20100178620-A1 INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed