SCHEMBL36277

SCHEMBL36277

N#C/C(=N\OS(=O)(=O)c1ccc([N+](=O)[O-])cc1)c1ccccc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 6/20 0.51
ALDH1A1 P00352 2/20 0.51
CES2 O00748 1/20 0.43
CES1 P23141 1/20 0.43
SMN1; SMN2 Q16637 4/20 0.43
LMNA P02545 4/20 0.43
HSD11B1 P28845 1/20 0.41
MEN1 O00255 6/20 0.40
KMT2A Q03164 6/20 0.40
POLB P06746 2/20 0.40
CA12 O43570 1/20 0.40
CA2 P00918 1/20 0.40
CA9 Q16790 1/20 0.40
KDM4E B2RXH2 2/20 0.39
NPC1 O15118 1/20 0.39
MITF O75030 1/20 0.39
RAB9A P51151 1/20 0.39
NPSR1 Q6W5P4 2/20 0.39
GPR17 Q13304 1/20 0.38
MMP14 P50281 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL36278 1.00 MAPT (0.51) MAPTALDH1A1CES2CES1SMN1; SMN2
SCHEMBL92016 0.86 KDM4E (0.49) MAPTALDH1A1LMNAMEN1KMT2A
SCHEMBL7976575 0.86 KDM4E (0.49) MAPTALDH1A1LMNAMEN1KMT2A
SCHEMBL28486532 0.85 MAPT (0.50) MAPTALDH1A1SMN1; SMN2LMNAMEN1
SCHEMBL7786939 0.84 MAPT (0.46) MAPTALDH1A1SMN1; SMN2LMNAMEN1
SCHEMBL7786937 0.84 MAPT (0.46) MAPTALDH1A1SMN1; SMN2LMNAMEN1
SCHEMBL10673694 0.84 KDM4E (0.42) MAPTALDH1A1CES2LMNAMEN1
SCHEMBL10673690 0.84 KDM4E (0.42) MAPTALDH1A1CES2LMNAMEN1
SCHEMBL10083957 0.83 MAPT (0.49) MAPTALDH1A1LMNAKMT2AKDM4E
SCHEMBL36920 0.83 KMT2A (0.50) MAPTALDH1A1SMN1; SMN2LMNAMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 755 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20230176479-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-08 US disclosed
EP-3896522-B1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
EP-4167028-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-19 EP disclosed
CN-115885217-A Negative resist film laminate and pattern forming method 信越化学工业株式会社 2023-03-31 CN disclosed
CN-108107676-B Chemically amplified positive resist film laminate and pattern formation method 信越化学工业株式会社 2023-02-21 CN disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
US-11460774-B2 Photosensitive resin composition, photosensitive dry film, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-10-04 US disclosed
CN-114600045-A Photosensitive resin composition, photosensitive dry film and pattern forming method 信越化学工业株式会社 2022-06-07 CN disclosed
EP-1103856-A1 Positive resist composition & process for forming resist pattern using same Central Glass Company, Limited (JP) 2001-05-30 EP disclosed
US-6077644-A Positive-working resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-06-20 US disclosed
US-6063953-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-05-16 US disclosed
US-6022666-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-02-08 US disclosed
US-5929271-A Compounds for use in a positive-working resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 US disclosed
US-5902713-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-05-11 US disclosed
EP-0780729-A1 Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1997-06-25 EP disclosed
EP-0139609-B1 PROCESS FOR CURING ACID-CURABLE LACQUERS CIBA-GEIGY AG (CH) 1987-02-04 EP disclosed
US-4540598-A LATENT OXIME SULFONATE CATALYSTS CIBA-GEIGY CORPORATION (US) 1985-09-10 US disclosed
EP-0139609-A1 Process for curing acid-curable lacquers CIBA-GEIGY AG (CH) 1985-05-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 MAPT 3291/4885ALDH1A1 2201/4885CES2 333/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 MAPT 3609/4885ALDH1A1 1388/4885CES2 2549/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.