SCHEMBL36920

SCHEMBL36920

N#C/C(=N\OS(=O)(=O)c1ccc(Cl)cc1)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.50
MEN1 O00255 3/20 0.50
KDM4E B2RXH2 5/20 0.48
MAPT P10636 7/20 0.48
GAA P10253 1/20 0.48
TDP1 Q9NUW8 3/20 0.42
FLT1 P17948 1/20 0.41
FLT4 P35916 1/20 0.41
KDR P35968 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
SMN1; SMN2 Q16637 2/20 0.41
ALDH1A1 P00352 2/20 0.40
CYP1A2 P05177 2/20 0.40
CYP2C9 P11712 2/20 0.40
CYP2C19 P33261 2/20 0.40
PLA2G7 Q13093 1/20 0.40
HTT P42858 2/20 0.39
LMNA P02545 1/20 0.39
ALOX12 P18054 1/20 0.39
NPY1R P25929 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL36921 1.00 KMT2A (0.50) KMT2AMEN1KDM4EMAPTGAA
SCHEMBL36199 0.94 TDP1 (0.45) KMT2AMEN1KDM4EMAPTGAA
SCHEMBL36200 0.94 TDP1 (0.45) KMT2AMEN1KDM4EMAPTGAA
SCHEMBL92016 0.90 KDM4E (0.49) KMT2AMEN1KDM4EMAPTTDP1
SCHEMBL7976575 0.90 KDM4E (0.49) KMT2AMEN1KDM4EMAPTTDP1
SCHEMBL10673694 0.87 KDM4E (0.42) KMT2AMEN1KDM4EMAPTGAA
SCHEMBL10673690 0.87 KDM4E (0.42) KMT2AMEN1KDM4EMAPTGAA
SCHEMBL10083957 0.87 MAPT (0.49) KMT2AKDM4EMAPTGAATDP1
SCHEMBL10643371 0.86 PLA2G7 (0.41) KMT2AMEN1KDM4EMAPTGAA
SCHEMBL10643361 0.86 PLA2G7 (0.41) KMT2AMEN1KDM4EMAPTGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 737 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20230176479-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-08 US disclosed
EP-3896522-B1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
EP-4167028-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-19 EP disclosed
CN-115885217-A Negative resist film laminate and pattern forming method 信越化学工业株式会社 2023-03-31 CN disclosed
CN-108107676-B Chemically amplified positive resist film laminate and pattern formation method 信越化学工业株式会社 2023-02-21 CN disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
US-11460774-B2 Photosensitive resin composition, photosensitive dry film, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-10-04 US disclosed
CN-114600045-A Photosensitive resin composition, photosensitive dry film and pattern forming method 信越化学工业株式会社 2022-06-07 CN disclosed
US-6077644-A Positive-working resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-06-20 US disclosed
US-6063953-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-05-16 US disclosed
US-6022666-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-02-08 US disclosed
US-5929271-A Compounds for use in a positive-working resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 US disclosed
US-5902713-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-05-11 US disclosed
EP-0780729-A1 Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1997-06-25 EP disclosed
EP-0241423-B1 PROCESS FOR THE PRODUCTION OF POSITIVE IMAGES CIBA-GEIGY AG (CH) 1993-09-15 EP disclosed
EP-0139609-B1 PROCESS FOR CURING ACID-CURABLE LACQUERS CIBA-GEIGY AG (CH) 1987-02-04 EP disclosed
US-4540598-A LATENT OXIME SULFONATE CATALYSTS CIBA-GEIGY CORPORATION (US) 1985-09-10 US disclosed
EP-0139609-A1 Process for curing acid-curable lacquers CIBA-GEIGY AG (CH) 1985-05-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 KMT2A 853/4885MEN1 2273/4885KDM4E 1103/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 KMT2A 3292/4885MEN1 194/4885KDM4E 1808/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.