SCHEMBL36346

SCHEMBL36346

O=[SiH2].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9241472 0.89
SCHEMBL28831262 0.89
SCHEMBL6883074 0.89
SCHEMBL17557778 0.89
SCHEMBL5092216 0.89
SCHEMBL2517318 0.89
SCHEMBL6704087 0.89
SCHEMBL6887441 0.89
SCHEMBL15213 0.87
SCHEMBL28982468 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 20625 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12641802-B2 Liner to form composite high-K dielectric APPLIED MATERIALS, INC. (US) 2026-05-26 US claimed
US-12628383-B2 Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers INTEL CORPORATION (US) 2026-05-12 US claimed
US-20260129886-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-07 US claimed
US-12604484-B2 Semiconductor device including data storage structure and method of manufacturing data storage structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-14 US claimed
US-20260090066-A1 SEMICONDUCTOR DEVICE COMPRISING HIGH-K AMORPHOUS FLUORINATED CARBON THIN FILM GATE DIELECTRIC LAYER AND MANUFACTURING METHOD THEREOF THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) (KR) 2026-03-26 US claimed
US-20260081089-A1 BACKEND FIELD EMISSION DEVICES SHARMA ABHISHEK A (US) 2026-03-19 US claimed
US-20260068548-A1 RESISTIVE SWITCHING STRUCTURE TO IMPROVE RRAM TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2026-03-05 US claimed
US-12550451-B2 Electrostatic discharge prevention TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-02-10 US claimed
US-12527015-B2 Semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-01-13 US claimed
US-20250329581-A1 SEMICONDUCTOR DEVICE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-10-23 US claimed
CN-88102109-A Process for ammoxidation of paraffins and catalyst system therefor 1988-11-23 CN claimed
CN-86108899-B PROCESS FOR MANUFACTURE OF METAL SINTER 1988-08-10 CN claimed
CN-86108842-A The method of dewaxing catalyst and use titanoaluminosilicatmolecular molecular sieves 1987-07-29 CN claimed
CN-85104670-A The plate of material that is used for metal sinter is made the method for this plate and the method for manufacturing metal sinter 1986-12-24 CN claimed
CN-85109629-A Dewaxing catalyst using non-zeolite molecular sieve and its process 1986-09-10 CN claimed
CN-85109635-A Hydrocracking catalyst and process using non-zeolitic molecular sieves 1986-09-10 CN claimed
CN-85109361-A The cracking method of catalytic cracking catalyst and application mix catalyst system 1986-08-27 CN claimed
CN-85109362-A The cracking method of catalytic cracking catalyst and applying silicon aluminophosphate molecular sieve 1986-08-27 CN claimed
CN-85109634-A The method of hydrocracking catalyst and application alumo-silicate molecular sieve 1986-06-10 CN claimed
CN-85109627-A Adopt silicoaluminophosphamolecular molecular sieve as dewaxing catalyst and technology thereof 1986-06-10 CN claimed