SCHEMBL365663

SCHEMBL365663

C=C(C)C(=O)OC(C)CC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.39
ALDH1A1 P00352 5/20 0.38
NPSR1 Q6W5P4 1/20 0.37
TSHR P16473 3/20 0.37
HSD17B10 Q99714 1/20 0.36
EPHX2 P34913 1/20 0.35
KMT2A Q03164 3/20 0.35
MEN1 O00255 2/20 0.35
L3MBTL1 Q9Y468 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27833332 0.86 ALDH1A1 (0.35) ALDH1A1TSHRL3MBTL1
SCHEMBL28425065 0.81 TSHR (0.33) ALDH1A1TSHR
SCHEMBL112621 0.80 ALDH1A1 (0.44) SMN1; SMN2ALDH1A1NPSR1TSHRHSD17B10
SCHEMBL3680714 0.79 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL1397055 0.79 SMN1; SMN2 (0.38) SMN1; SMN2ALDH1A1NPSR1TSHRHSD17B10
SCHEMBL3454512 0.79 ALDH1A1 (0.39) SMN1; SMN2ALDH1A1NPSR1TSHRHSD17B10
SCHEMBL7131819 0.78 TSHR (0.33) ALDH1A1TSHR
SCHEMBL3454445 0.77 MEN1 (0.42) SMN1; SMN2ALDH1A1NPSR1EPHX2KMT2A
SCHEMBL74910 0.76 HSD17B10 (0.33) SMN1; SMN2ALDH1A1HSD17B10KMT2AMEN1
SCHEMBL950609 0.75 TSHR (0.34) SMN1; SMN2ALDH1A1NPSR1TSHREPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 78 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3537217-B1 POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORP (JP) 2022-08-31 EP disclosed
EP-2539316-B1 LATENT ACIDS AND THEIR USE BASF SE (DE) 2019-10-23 EP disclosed
EP-3537217-A2 POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM Corporation (JP) 2019-09-11 EP disclosed
EP-1795960-B1 Positive resist composition, pattern forming method using the positive resist composition, use of the positive resit composition FUJIFILM CORP (JP) 2019-06-05 EP disclosed
EP-2329320-B1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD FUJIFILM CORP (JP) 2019-05-01 EP disclosed
CN-105283521-B The manufacture method of utensil and device, the utensil and device that the surface conditioning agent on the surface being made of inorganic material, surface are modified JSR株式会社 2018-05-11 CN disclosed
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
EP-2356516-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORP (JP) 2017-10-25 EP disclosed
US-9709891-B2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20170123318-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
EP-1837704-A2 Resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-26 EP disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
EP-1795960-A2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition Fujifilm Corporation (JP) 2007-06-13 EP disclosed
US-20070077519-A1 Pattern forming method and resist composition used therefor FUJI PHOTO FILM CO., LTD. 2007-04-05 US disclosed
EP-1770440-A2 Pattern forming method and resist composition used therefor FUJIFILM Corporation (JP) 2007-04-04 EP disclosed
EP-1754999-A2 Positive resist composition and method of pattern formation with the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 EP disclosed
US-6624257-B2 Calculating protection ratio of a hydroxyl group of a polymer using a multiple regression calibration curve obtained by regression- analyzing main components of near infrared absorption spectra of a plurality of samples SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-09-23 US disclosed
US-20020052449-A1 Method of quantifying protective ratio of hydroxyl groups of polymer compound SUMITOMO CHEMICAL COMPANY, LIMITED 2002-05-02 US disclosed