SCHEMBL365814

SCHEMBL365814

CCCCOC(=O)OC=Cc1ccccc1

nearest known ligand 0.53

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.53
KDM4E B2RXH2 2/20 0.49
TSHR P16473 4/20 0.49
L3MBTL1 Q9Y468 2/20 0.49
ALDH1A1 P00352 3/20 0.44
CYP3A4 P08684 2/20 0.44
MAPK1 P28482 2/20 0.44
BCHE P06276 4/20 0.44
TP53 P04637 1/20 0.44
EGFR P00533 1/20 0.43
HDAC3 O15379 1/20 0.43
ACHE P22303 2/20 0.43
HSD17B10 Q99714 1/20 0.43
LMNA P02545 1/20 0.43
MEN1 O00255 1/20 0.43
KMT2A Q03164 1/20 0.43
PPARA Q07869 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7534897 0.91 LMNA (0.49) TDP1KDM4EL3MBTL1ALDH1A1LMNA
4-Vinylphenol SCHEMBL2475241 0.88 TDP1 (0.44) TDP1KDM4ETSHRL3MBTL1ALDH1A1
SCHEMBL2544758 0.84 TSHR (0.51) TDP1KDM4ETSHRL3MBTL1ALDH1A1
SCHEMBL10356077 0.84 ATM (0.56) TDP1KDM4ETSHRL3MBTL1ALDH1A1
SCHEMBL7541866 0.84 MEN1 (0.53) TDP1KDM4EL3MBTL1ALDH1A1LMNA
SCHEMBL9127873 0.81 AKR1B10 (0.42) TDP1ALDH1A1BCHEHDAC3ACHE
SCHEMBL10767564 0.81 TSHR (0.45) TDP1TSHRL3MBTL1ALDH1A1CYP3A4
SCHEMBL9595722 0.81 TDP1 (0.55) TDP1KDM4ETSHRL3MBTL1ALDH1A1
SCHEMBL2196874 0.79 TDP1 (0.51) TDP1KDM4ETSHRL3MBTL1ALDH1A1
SCHEMBL8508728 0.79 HCAR2 (0.56) TDP1TSHRALDH1A1CYP3A4MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 150 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6255032-B1 Chemically amplified color resist composition INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2001-07-03 US claimed
EP-0520265-B1 Positive working radiation-sensitive composition with disulfone acid generators BASF AG (DE) 1999-11-17 EP claimed
EP-0797792-B1 PHOTOLITHOGRAPHIC METHOD OF PRODUCING STRUCTURAL FEATURES SIEMENS AG (DE) 1998-11-18 EP claimed
EP-0540965-A1 Positive light sensitive composition and process for the formation of relief pattern BASF Aktiengesellschaft (DE) 1993-05-12 EP claimed
EP-0361906-A2 Method of producing an image reversal negative photoresist having a photo-labile blocked imide HOECHST CELANESE CORPORATION (US) 1990-04-04 EP claimed
JP-4253939-A None JP disclosed
JP-4359906-A None JP disclosed
WO-2024047976-A1 PHOTOCURABLE INK-JET INK COMPOSITION サカタインクス株式会社 2024-03-07 WO disclosed
WO-2024029176-A1 PHOTOCURABLE INKJET INK COMPOSITION KJケミカルズ株式会社 2024-02-08 WO disclosed
WO-2023188625-A1 ACTIVE ENERGY RAY-CURABLE ADHESIVE COMPOSITION サカタインクス株式会社 2023-10-05 WO disclosed
WO-2023188627-A1 ACTIVE ENERGY RAY-CURABLE ADHESIVE COMPOSITION サカタインクス株式会社 2023-10-05 WO disclosed
WO-2023188628-A1 ACTIVE ENERGY RAY-CURABLE INK COMPOSITION FOR REVERSE PRINTING サカタインクス株式会社 2023-10-05 WO disclosed
US-4996136-A Radiation sensitive materials and devices made therewith AT&T BELL LABORATORIES (US) 1991-02-26 US disclosed
EP-0291670-B1 VAPOR PHASE PHOTORESIST SILYLATION PROCESS International Business Machines Corporation (US) 1991-02-20 EP disclosed
EP-0405957-A1 Deep U.V. photoresist compositions containing polycyclic cyclopentane -2- diazo-1,3-dione HOECHST CELANESE CORPORATION (US) 1991-01-02 EP disclosed
EP-0404206-A2 Resist compositions International Business Machines Corporation (US) 1990-12-27 EP disclosed
EP-0366590-A2 Highly sensitive positive photoresist compositions International Business Machines Corporation (US) 1990-05-02 EP disclosed
EP-0330386-A2 Radiation sensitive materials and devices made therewith AT&T Corp. (US) 1989-08-30 EP disclosed
EP-0291670-A1 Vapor phase photoresist silylation process International Business Machines Corporation (US) 1988-11-23 EP disclosed
EP-0254853-A2 Lithographic method employing thermally stable photoresists with high sensitivity forming a hydogen-bonded network International Business Machines Corporation (US) 1988-02-03 EP disclosed