⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL42700 | 1.00 | — | — | |
| Water SCHEMBL27822404 | 0.91 | — | — | |
| SCHEMBL28179760 | 0.91 | — | — | |
| SCHEMBL27873185 | 0.91 | — | — | |
| SCHEMBL1370297 | 0.91 | — | — | |
| Ammonia Solution, Strong SCHEMBL27758569 | 0.91 | — | — | |
| SCHEMBL644386 | 0.91 | — | — | |
| SCHEMBL29161692 | 0.91 | — | — | |
| SCHEMBL666950 | 0.91 | — | — | |
| SCHEMBL1369335 | 0.91 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9112029-B2 | Strained transistor integration for CMOS | INTEL CORPORATION (US) | 2015-08-18 | — | — | US | claimed |
| US-20140239345-A1 | STRAINED TRANSISTOR INTEGRATION FOR CMOS | INTEL CORPORATION (US) | 2014-08-28 | — | — | US | claimed |
| US-8748869-B2 | Strained transistor integration for CMOS | INTEL CORPORATION (US) | 2014-06-10 | — | — | US | claimed |
| US-20130153965-A1 | STRAINED TRANSISTOR INTEGRATION FOR CMOS | BOYANOV BOYAN (US) | 2013-06-20 | — | — | US | claimed |
| US-8373154-B2 | Strained transistor integration for CMOS | INTEL CORPORATION (US) | 2013-02-12 | — | — | US | claimed |
| EP-2136404-B1 | Transistor gate electrode having conductor material layer | INTEL CORP (US) | 2012-01-25 | — | — | EP | claimed |
| US-7871916-B2 | Transistor gate electrode having conductor material layer | INTEL CORPORATION (US) | 2011-01-18 | — | — | US | claimed |
| US-20100044754-A1 | STRAINED TRANSISTOR INTEGRATION FOR CMOS | BOYANOV BOYAN | 2010-02-25 | — | — | US | claimed |
| US-7662689-B2 | Strained transistor integration for CMOS | INTEL CORPORATION (US) | 2010-02-16 | — | — | US | claimed |
| US-20090315076-A1 | TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER | TAHOE RESEARCH, LTD. (IE) | 2009-12-24 | — | — | US | claimed |
| US-7635648-B2 | Methods for fabricating dual material gate in a semiconductor device | APPLIED MATERIALS, INC. (US) | 2009-12-22 | — | — | US | claimed |
| EP-1697994-B1 | TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER AND METHOD OF FABRICATION | INTEL CORP (US) | 2009-11-25 | — | — | EP | claimed |
| US-20090258484-A1 | METHODS FOR FABRICATING DUAL MATERIAL GATE IN A SEMICONDUCTOR DEVICE | APPLIED MATERIALS, INC. | 2009-10-15 | — | — | US | claimed |
| US-20070170464-A1 | Transistor gate electrode having conductor material layer | TAHOE RESEARCH, LTD. (IE) | 2007-07-26 | — | — | US | claimed |
| US-7223679-B2 | Transistor gate electrode having conductor material layer | INTEL CORPORATION (US) | 2007-05-29 | — | — | US | claimed |
| EP-1697994-A1 | TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER | Intel Corporation (US) | 2006-09-06 | — | — | EP | claimed |
| WO-2005067055-A1 | TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER | INTEL CORPORATION (US) | 2005-07-21 | — | — | WO | claimed |
| WO-2005067014-A1 | STRAINED TRANSISTOR INTEGRATION FOR CMOS | INTEL CORPORATION (US) | 2005-07-21 | — | — | WO | claimed |
| US-20050145944-A1 | Transistor gate electrode having conductor material layer | TAHOE RESEARCH, LTD. (IE) | 2005-07-07 | — | — | US | claimed |
| US-20050136584-A1 | Strained transistor integration for CMOS | INTEL CORPORATION | 2005-06-23 | — | — | US | claimed |