SCHEMBL42700

SCHEMBL42700

O[Si](O)(O)O.[Hf]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL375121 1.00
Water SCHEMBL27822404 0.91
SCHEMBL28179760 0.91
SCHEMBL27873185 0.91
SCHEMBL1370297 0.91
Ammonia Solution, Strong SCHEMBL27758569 0.91
SCHEMBL644386 0.91
SCHEMBL29161692 0.91
SCHEMBL666950 0.91
SCHEMBL1369335 0.91

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 24210 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12635857-B2 Electronic assemblies including a conformal moisture barrier Intuitive Surgical Operations, Inc. (US) 2026-05-26 US claimed
CN-122059727-A Layered hafnium silicate bonding layer with low annealing temperature and preparation method and application thereof 辽宁材料实验室 2026-05-19 CN claimed
CN-122028479-A Semiconductor device with engineering gate dielectric stack and preparation method thereof 赛晶亚太半导体科技(浙江)有限公司 2026-05-12 CN claimed
US-12624225-B2 Environmental barrier coating RTX CORPORATION (US) 2026-05-12 US claimed
EP-4737429-A1 POROUS MACHINED COATINGS RTX Corporation (US) 2026-05-06 EP claimed
US-20260117358-A1 POROUS MACHINED COATINGS RTX CORPORATION (US) 2026-04-30 US claimed
US-20260123296-A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME UNIV NANYANG TECH (SG) 2026-04-30 US claimed
US-20260109655-A1 MULTILAYER ENVIRONMENTAL BARRIER COATING RTX CORPORATION (US) 2026-04-23 US claimed
EP-4729500-A1 MULTILAYER ENVIRONMENTAL BARRIER COATING RTX Corporation (US) 2026-04-22 EP claimed
EP-4729499-A1 HAFNON CONTAINING ENVIRONMENTAL BARRIER COATING RTX Corporation (US) 2026-04-22 EP claimed
US-20020024092-A1 Memory cell, memory cell arrangement and fabrication method PALM HERBERT (DE) 2002-02-28 US claimed
US-20020020890-A1 Memory cell and production method POLARIS INNOVATIONS LIMITED (IE) 2002-02-21 US claimed
US-6348373-B1 Method for improving electrical properties of high dielectric constant films SHARP LABORATORIES OF AMERICA, INC. 2002-02-19 US claimed
WO-2001099166-A1 THIN FILM FORMING METHOD GENITECH INC. (KR) 2001-12-27 WO claimed
EP-1144712-A1 MULTIPLE-THICKNESS GATE OXIDE FORMED BY OXYGEN IMPLANTATION THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2001-10-17 EP claimed
US-6300203-B1 Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors ADVANCED MICRO DEVICES, INC. 2001-10-09 US claimed
EP-1139405-A2 Method for improving electrical properties of high dielectric constant films SHARP KABUSHIKI KAISHA (JP) 2001-10-04 EP claimed
WO-2001025502-A1 COMPOSITION AND METHOD FOR CVD DEPOSITION OF Zr/Hf SILICATE FILMS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2001-04-12 WO claimed
WO-2000034548-A1 MULTIPLE-THICKNESS GATE OXIDE FORMED BY OXYGEN IMPLANTATION THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2000-06-15 WO claimed
US-6020243-A FORMING TRANSISTOR ON SEMICONDUCTOR SUBSTRATE TEXAS INSTRUMENTS INCORPORATED (US) 2000-02-01 US claimed