⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12470801 | 0.91 | — | — | |
| SCHEMBL42700 | 0.91 | — | — | |
| SCHEMBL8503534 | 0.91 | — | — | |
| SCHEMBL17263 | 0.91 | — | — | |
| SCHEMBL21457927 | 0.91 | — | — | |
| SCHEMBL2400500 | 0.91 | — | — | |
| SCHEMBL11356950 | 0.91 | — | — | |
| SCHEMBL375121 | 0.91 | — | — | |
| SCHEMBL23716983 | 0.83 | — | — | |
| SCHEMBL1369435 | 0.83 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 147 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220376176-A1 | METHODS OF FORMING ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS | MICRON TECHNOLOGY INC (US) | 2022-11-24 | — | — | US | claimed |
| US-11444243-B2 | Electronic devices comprising metal oxide materials and related methods and systems | MICRON TECHNOLOGY, INC. (US) | 2022-09-13 | — | — | US | claimed |
| EP-4052297-A1 | ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS | Micron Technology, Inc. (US) | 2022-09-07 | — | — | EP | claimed |
| CN-114631198-A | Electronic devices including metal oxide materials and related methods and systems | 美光科技公司 | 2022-06-14 | — | — | CN | claimed |
| US-20210126193-A1 | ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS | MICRON TECHNOLOGY, INC. | 2021-04-29 | — | — | US | claimed |
| US-20130015518-A1 | SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-01-17 | — | — | US | claimed |
| US-8252674-B2 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-08-28 | — | — | US | claimed |
| US-20110287622-A1 | Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors | LIM HA-JIN (KR) | 2011-11-24 | — | — | US | claimed |
| CN-102197459-A | Vapor deposition method for ternary compounds | APPLIED MATERIALS INC | 2011-09-21 | — | — | CN | claimed |
| US-8013402-B2 | Transistors with multilayered dielectric films | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-06 | — | — | US | claimed |
| US-20100102417-A1 | VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS | APPLIED MATERIALS, INC. (US) | 2010-04-29 | — | — | US | claimed |
| US-20100025781-A1 | Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors | LIM HA-JIN | 2010-02-04 | — | — | US | claimed |
| CN-100449775-C | High density composite metal-insulator-metal capacitor with reduced voltage dependence in semiconductor chips | NEWPORT FAB DBA JAZZ SEMICOND (US) | 2009-01-07 | — | — | CN | claimed |
| US-7078310-B1 | Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies | NEWPORT FAB, LLC (US) | 2006-07-18 | — | — | US | claimed |
| CN-1771603-A | High density composite metal-insulator-metal capacitor with reduced voltage dependence in semiconductor chips | NEWPORT FAB DBA JAZZ SEMICOND (US) | 2006-05-10 | — | — | CN | claimed |
| US-7041569-B1 | Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor dies | NEWPORT FAB, LLC (US) | 2006-05-09 | — | — | US | claimed |
| US-20060081948-A1 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-04-20 | — | — | US | claimed |
| WO-2004095582-A1 | A HIGH DENSITY MIM CAPACITOR WITH REDUCED VOLTAGE DEPENDENCE IN SEMICONDUCTOR DIES | NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR (US) | 2004-11-04 | — | — | WO | claimed |
| US-6777777-B1 | High density composite MIM capacitor with flexible routing in semiconductor dies | NEWPORT FAB, LLC | 2004-08-17 | — | — | US | claimed |
| US-6680521-B1 | High density composite MIM capacitor with reduced voltage dependence in semiconductor dies | NEWPORT FAB, LLC | 2004-01-20 | — | — | US | claimed |