SCHEMBL377699

SCHEMBL377699

C=CC(F)OP(=O)(O)OF

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL89079 0.89 PGK1 (0.31)
Ammonia Solution, Strong SCHEMBL89965 0.86 PGK1 (0.30)
SCHEMBL87741 0.79
SCHEMBL720356 0.77 PGK1 (0.30)
Ammonia Solution, Strong SCHEMBL7056618 0.77 PGK1 (0.30)
SCHEMBL377698 0.77
Ammonia Solution, Strong SCHEMBL8940794 0.77 PGK1 (0.30)
SCHEMBL1170282 0.77 PGK1 (0.30)
SCHEMBL2099614 0.74
Diethanolamine SCHEMBL90545 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 122 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112745853-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-03-26 CN claimed
CN-112824482-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-03-26 CN claimed
EP-3557684-B1 LITHIUM SECONDARY BATTERIES AND NONAQUEOUS ELECTROLYTE FOR USE IN THE SAME MITSUBISHI CHEM CORP (JP) 2024-01-24 EP claimed
CN-112779014-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2024-01-09 CN claimed
CN-112521946-B Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2023-12-22 CN claimed
CN-110655924-B Silicon substrate etching solution OCI有限公司 2022-11-04 CN claimed
EP-3527639-B1 A METHOD FOR BONDING A THERMOPLASTIC MATERIAL BY MICROWAVE-IRRADIATION PROIONIC GMBH (AT) 2021-09-08 EP claimed
US-11084954-B2 Method for curing an adhesive using microwave irradiation PROIONIC GMBH (AT) 2021-08-10 US claimed
CN-112824482-A Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2021-05-21 CN claimed
CN-112779014-A Silicon nitride film etching solution and method for manufacturing semiconductor device using the same OCI有限公司 2021-05-11 CN claimed
EP-2812413-B1 REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE MERCK PATENT GMBH (DE) 2016-03-16 EP claimed
US-20150008373-A1 REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE MERCK PATENT GMBH (DE) 2015-01-08 US claimed
EP-2812413-A1 REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE Merck Patent GmbH (DE) 2014-12-17 EP claimed
WO-2013117284-A1 REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE MERCK PATENT GMBH (DE) 2013-08-15 WO claimed
US-7501522-B2 Method for the production of purified 1,3-substituted imidazolium salts BASF AKTIENGESELLSCHAFT (DE) 2009-03-10 US claimed
EP-1786776-B1 METHOD FOR PRODUCING HIGH-PURITY QUATERNARY AMMONIUM COMPOUNDS BASF SE (DE) 2008-12-03 EP claimed
US-20080033209-A1 Method For High-Purity Quaternary Ammonium Compounds BASF AKTIENGSELLSCHAFT (DE) 2008-02-07 US claimed
US-20080009633-A1 Method for Producing High-Purity Quaternary Ammonium Compounds BASF AKTIENGESELLSCHAFT (DE) 2008-01-10 US claimed
EP-1651614-B1 METHOD FOR THE PRODUCTION OF PURIFIED 1,3-SUBSTITUTED IMIDAZOLIUM SALTS BASF AG (DE) 2007-07-11 EP claimed
US-20060149074-A1 Method for the production of purified 1,3-substituted imidazolium salts BASF AKTIENGESELLSCHAFT (DE) 2006-07-06 US claimed