SCHEMBL3801345

SCHEMBL3801345

CO[Si](CC[Si](C)(Cl)Cl)(OC)OC

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30711792 0.83 LMNA (0.38) LMNA
SCHEMBL22084561 0.82 LMNA (0.31) LMNA
SCHEMBL35673 0.80 LMNA (0.39) LMNA
SCHEMBL22092444 0.80 LMNA (0.39) LMNA
SCHEMBL5034208 0.79 LMNA (0.32) LMNA
SCHEMBL15049910 0.77 LMNA (0.37) LMNA
SCHEMBL523587 0.77 ALDH1A1 (0.46)
SCHEMBL15104787 0.77 LMNA (0.31) LMNA
SCHEMBL5412636 0.75 LMNA (0.33) LMNA
SCHEMBL21403438 0.75 LMNA (0.33) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1787319-A1 NOVEL POLYORGANOSILOXANE DIELECTRIC MATERIALS Silecs OY (FI) 2007-05-23 EP claimed
US-20060058487-A1 excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition PIBOND OY (FI) 2006-03-16 US claimed
WO-2006024693-A1 NOVEL POLYORGANOSILOXANE DIELECTRIC MATERIALS SILECS OY (FI) 2006-03-09 WO claimed
US-20100317179-A1 METHOD FOR MAKING INTEGRATED CIRCUIT DEVICE SILECS OY (FI) 2010-12-16 US disclosed
US-7504470-B2 Polyorganosiloxane dielectric materials SILECS OY (FI) 2009-03-17 US disclosed
EP-1787319-A1 NOVEL POLYORGANOSILOXANE DIELECTRIC MATERIALS Silecs OY (FI) 2007-05-23 EP disclosed
US-20060058487-A1 excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition PIBOND OY (FI) 2006-03-16 US disclosed
WO-2006024693-A1 NOVEL POLYORGANOSILOXANE DIELECTRIC MATERIALS SILECS OY (FI) 2006-03-09 WO disclosed