SCHEMBL382710

SCHEMBL382710

O=[C]OC12CC3CC(CC(C3)C1O)C2

nearest known ligand 0.31

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 1/20 0.31
CYP2C9 P11712 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3915507 0.81 GRIN2D (0.31)
SCHEMBL383263 0.77 THRB (0.31) CYP2C9
SCHEMBL11016772 0.72
SCHEMBL5002151 0.69 CYP2C9 (0.30) CYP2C9
SCHEMBL17024368 0.69
SCHEMBL11125104 0.69 EPHX2 (0.32) EPHX2
SCHEMBL454650 0.68 THRB (0.30) CYP2C9
SCHEMBL1539096 0.68 CYP19A1 (0.34) EPHX2CYP2C9
SCHEMBL9242209 0.68 EPHX1 (0.33) EPHX2
SCHEMBL8863 0.68 NPSR1 (0.43) EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 207 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1150166-B1 Polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2007-12-19 EP claimed
US-6667145-B1 Resist composition comprising as a base resin a polymer having highly adherent, highly rigid units and especially suited as micropatterning material for VLSI fabrication, and (2) a patterning process using the resist SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-23 US claimed
US-6596463-B2 Photosensitivity, resolution, chemical resistance SHIN-ETSU CHEMICAL, CO., LTD. (JP) 2003-07-22 US claimed
US-6566038-B2 Micropatterning using electron beams or ultraviolet rays SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-20 US claimed
US-6312867-B1 Ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-06 US claimed
EP-2482132-B1 Resist pattern forming process SHINETSU CHEMICAL CO (JP) 2019-10-16 EP disclosed
EP-1276012-B1 Resist patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
US-9057949-B2 Patterning process, resist composition, polymer, and polymerizable ester compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-16 US disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2081084-B1 Positive resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2014-12-24 EP disclosed
EP-1403295-B1 Ester compounds, polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
US-8795942-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-05 US disclosed
US-6280898-B1 PHOTORESISTS PATTERNS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-28 US disclosed
EP-1096318-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1096317-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1085377-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-03-21 EP disclosed
EP-1053985-A1 Resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2000-11-22 EP disclosed
US-6147249-A ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-11-14 US disclosed
EP-1031879-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-30 EP disclosed
EP-1004568-A2 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-31 EP disclosed