SCHEMBL383637

SCHEMBL383637

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.38
KDM4E B2RXH2 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
CA2 P00918 3/20 0.34
CA1 P00915 2/20 0.34
MMP1 P03956 2/20 0.34
MMP2 P08253 2/20 0.34
MMP9 P14780 2/20 0.34
MMP8 P22894 2/20 0.34
MMP13 P45452 2/20 0.34
F2 P00734 1/20 0.31
PRSS1 P07477 1/20 0.31
PRSS2 P07478 1/20 0.31
PRSS3 P35030 1/20 0.31
USP2 O75604 1/20 0.31
MAPT P10636 1/20 0.31
ALDH1A1 P00352 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5492476 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL1827215 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL1576526 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL1826316 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL5484308 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL5485456 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL1824726 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL1829776 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
SCHEMBL1826686 1.00 TSHR (0.38) TSHRKDM4ETDP1CA2CA1
Ammonia Solution, Strong SCHEMBL18008412 0.98 TSHR (0.36) TSHRKDM4ETDP1CA2CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 131 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
CN-107615168-B Radiation-sensitive composition 日产化学工业株式会社 2023-12-19 CN disclosed
CN-117008420-A Radiation-sensitive composition 日产化学工业株式会社 2023-11-07 CN disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
CN-109563371-B Polysiloxane composition comprising acetal-protected silanol groups 日产化学株式会社 2021-09-21 CN disclosed
CN-113252759-A Electrochemical gas sensor and electrolyte for electrochemical gas sensor 德尔格安全股份两合公司 2021-08-13 CN disclosed
US-20200326299-A1 ELECTROCHEMICAL GAS SENSOR AND ELECTROLYTE FOR AN ELECTROCHEMICAL GAS SENSOR Dräger Safety AG & Co. KGaA (DE) 2020-10-15 US disclosed
US-10732144-B2 Electrochemical gas sensor and electrolyte for an electrochemical gas sensor Dräger Safety AG & Co. KGaA (DE) 2020-08-04 US disclosed
US-20070196763-A1 Method of forming laminated resist DAIKIN INDUSTRIES, LTD. 2007-08-23 US disclosed
EP-1818723-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR Corporation (JP) 2007-08-15 EP disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
US-20070099114-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070087287-A1 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-04-19 US disclosed
US-20060228648-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-10-12 US disclosed
EP-1710230-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-10-11 EP disclosed
EP-1686425-A1 METHOD FOR FORMING MULTILAYER RESIST Daikin Industries, Ltd. (JP) 2006-08-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 TSHR 3691/4885KDM4E 1103/4885TDP1 835/4885
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 TSHR 197/4885KDM4E 3540/4885TDP1 4246/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 TSHR 2115/4885KDM4E 1808/4885TDP1 1157/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.