SCHEMBL3839352

SCHEMBL3839352

O=C(c1ccc(Oc2ccccc2Br)cc1)c1ccc(Oc2ccccc2Br)cc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SRD5A2 P31213 5/20 0.55
PARP10 Q53GL7 2/20 0.47
POLB P06746 1/20 0.46
CYP1A2 P05177 1/20 0.46
CYP2D6 P10635 1/20 0.46
HPGD P15428 1/20 0.46
CYP2C19 P33261 1/20 0.46
LMNA P02545 2/20 0.46
MAPT P10636 2/20 0.46
ELANE P08246 1/20 0.46
MEN1 O00255 1/20 0.46
MAPK1 P28482 1/20 0.46
RAB9A P51151 1/20 0.46
KMT2A Q03164 1/20 0.46
NPSR1 Q6W5P4 1/20 0.46
RXFP1 Q9HBX9 1/20 0.46
L3MBTL1 Q9Y468 1/20 0.43
STS P08842 1/20 0.42
GAA P10253 1/20 0.42
ALDH1A1 P00352 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3840260 0.89 CTNNB1 (0.46) SRD5A2PARP10POLBMAPTELANE
SCHEMBL15924417 0.87 SRD5A2 (0.58) SRD5A2PARP10
SCHEMBL15924500 0.86 PARP10 (0.66) PARP10POLBCYP2C19MAPTKMT2A
SCHEMBL11509042 0.86 MAPT (0.60) PARP10HPGDMAPTRAB9AKMT2A
SCHEMBL74839 0.84 ALDH1A1 (0.52) PARP10POLBCYP1A2CYP2C19LMNA
SCHEMBL2457384 0.83 CA1 (0.53) POLBLMNAMAPTMEN1RAB9A
SCHEMBL10557155 0.82 SRD5A2 (0.71) SRD5A2PARP10POLBLMNAMAPT
SCHEMBL28928525 0.82 SRD5A2 (0.66) SRD5A2PARP10POLBLMNAMAPT
SCHEMBL30054718 0.82 SRD5A2 (0.66) SRD5A2PARP10POLBLMNAMAPT
SCHEMBL3843172 0.82 ALDH1A1 (0.50) POLBCYP1A2CYP2C19LMNAMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US claimed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
EP-1254917-B1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR CORP (JP) 2004-06-30 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
EP-1254917-A1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR Corporation (JP) 2002-11-06 EP disclosed
US-20020161173-A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2002-10-31 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed