Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2C19 | P33261 | 1/20 | 0.35 |
| ▸ | AKR1C1 | Q04828 | 1/20 | 0.33 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.31 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.31 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL383269 | 0.98 | AKR1C1 (0.34) | CYP2C19AKR1C1CYP4F2CYP4A11 | |
| SCHEMBL28115283 | 0.88 | — | — | |
| SCHEMBL16234619 | 0.77 | CYP3A4 (0.42) | CYP4F2CYP4A11 | |
| SCHEMBL23406876 | 0.75 | CYP2C19 (0.41) | CYP2C19AKR1C1HSD11B1 | |
| SCHEMBL3318244 | 0.75 | LMNA (0.40) | AKR1C1 | |
| SCHEMBL8593448 | 0.73 | CYP2C19 (0.39) | CYP2C19AKR1C1 | |
| SCHEMBL29152542 | 0.73 | CYP2C19 (0.39) | CYP2C19AKR1C1 | |
| SCHEMBL28148022 | 0.73 | CYP2C19 (0.35) | CYP2C19 | |
| SCHEMBL11699430 | 0.72 | SMN1; SMN2 (0.39) | — | |
| SCHEMBL1352343 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 206 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1150166-B1 | Polymers, resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2007-12-19 | — | — | EP | claimed |
| US-6667145-B1 | Resist composition comprising as a base resin a polymer having highly adherent, highly rigid units and especially suited as micropatterning material for VLSI fabrication, and (2) a patterning process using the resist | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-23 | — | — | US | claimed |
| US-6596463-B2 | Photosensitivity, resolution, chemical resistance | SHIN-ETSU CHEMICAL, CO., LTD. (JP) | 2003-07-22 | — | — | US | claimed |
| US-6566038-B2 | Micropatterning using electron beams or ultraviolet rays | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-05-20 | — | — | US | claimed |
| US-6312867-B1 | Ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-06 | — | — | US | claimed |
| EP-2482132-B1 | Resist pattern forming process | SHINETSU CHEMICAL CO (JP) | 2019-10-16 | — | — | EP | disclosed |
| US-9459528-B2 | Negative tone resist composition for solvent developing and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| EP-1276012-B1 | Resist patterning process | SHINETSU CHEMICAL CO (JP) | 2016-03-23 | — | — | EP | disclosed |
| US-9057949-B2 | Patterning process, resist composition, polymer, and polymerizable ester compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2081084-B1 | Positive resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-12-24 | — | — | EP | disclosed |
| US-20140363770-A1 | NEGATIVE TONE RESIST COMPOSITION FOR SOLVENT DEVELOPING AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-11 | — | — | US | disclosed |
| US-6280898-B1 | PHOTORESISTS PATTERNS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-28 | — | — | US | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |