SCHEMBL3840690

SCHEMBL3840690

CC=Cc1cccc(C(c2cccc(C=CC)c2OS(=O)(=O)c2ccc(C)cc2)(C(F)(F)F)C(F)(F)F)c1OS(=O)(=O)c1ccc(C)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 4/20 0.40
MAPK1 P28482 1/20 0.40
MAPT P10636 5/20 0.37
ALDH1A1 P00352 5/20 0.37
MEN1 O00255 6/20 0.36
KMT2A Q03164 6/20 0.36
GAA P10253 3/20 0.36
ESR1 P03372 1/20 0.36
ESR2 Q92731 1/20 0.36
HTT P42858 2/20 0.35
KEAP1 Q14145 1/20 0.34
NFE2L2 Q16236 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
HPGD P15428 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
HTR6 P50406 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3838731 0.86 LMNA (0.42) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL5672585 0.86 LMNA (0.42) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL8501650 0.84 LMNA (0.37) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL3846206 0.82 LMNA (0.42) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL3844084 0.82 MEN1 (0.41) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL8501647 0.80 LMNA (0.37) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL3840930 0.78 LMNA (0.43) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL8502261 0.78 LMNA (0.43) LMNAMAPK1MAPTALDH1A1MEN1
SCHEMBL9872956 0.75 GAA (0.46) LMNAMAPK1ALDH1A1MEN1KMT2A
SCHEMBL8502389 0.75 LMNA (0.41) LMNAMAPK1MAPTALDH1A1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-20050003218-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2005-01-06 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
EP-0956312-B1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR CORP (JP) 2001-10-10 EP disclosed
US-6300465-B1 Process for producing phenylene-containing polymer and film-forming material JSR CORPORATION (JP) 2001-10-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 LMNA 1305/4885MAPK1 2221/4885MAPT 649/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.