SCHEMBL3842097

SCHEMBL3842097

CC=Cc1cc(C(c2ccccc2)(c2ccccc2)c2ccc(OS(=O)(=O)C(F)(F)F)c(C=CC)c2)ccc1OS(=O)(=O)C(F)(F)F

nearest known ligand 0.34

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.32
CA2 P00918 2/20 0.32
CA9 Q16790 2/20 0.32
HSD11B1 P28845 1/20 0.32
HSD17B3 P37058 1/20 0.32
DRD2 P14416 6/20 0.31
DRD3 P35462 6/20 0.31
DRD4 P21917 4/20 0.31
DRD1 P21728 2/20 0.31
DRD5 P21918 2/20 0.31
HTR1D P28221 2/20 0.31
HRH4 Q9H3N8 1/20 0.31
HMGCR P04035 1/20 0.30
CYP3A4 P08684 1/20 0.30
CA5A P35218 1/20 0.30
HTR5A P47898 1/20 0.30
PTPN1 P18031 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3842094 1.00 CA1 (0.32) CA1CA2CA9HSD11B1HSD17B3
SCHEMBL3839800 0.87 CA1 (0.36) CA1CA2CA9HSD11B1HSD17B3
SCHEMBL3839796 0.87 CA1 (0.36) CA1CA2CA9HSD11B1HSD17B3
SCHEMBL3841044 0.85 PTPN11 (0.35) CA1CA2CA9DRD2DRD3
SCHEMBL3841040 0.85 PTPN11 (0.35) CA1CA2CA9DRD2DRD3
SCHEMBL3844718 0.85 ALDH1A1 (0.47) HSD11B1HSD17B3
SCHEMBL3844717 0.85 ALDH1A1 (0.47) HSD11B1HSD17B3
SCHEMBL3846194 0.84 HMGCR (0.32) CA1CA2CA9DRD2DRD3
SCHEMBL3846190 0.84 HMGCR (0.32) CA1CA2CA9DRD2DRD3
SCHEMBL3841055 0.81 GAA (0.39) CA1CA2CA9HSD11B1HSD17B3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-20050003218-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2005-01-06 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
EP-0956312-B1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR CORP (JP) 2001-10-10 EP disclosed
US-6300465-B1 Process for producing phenylene-containing polymer and film-forming material JSR CORPORATION (JP) 2001-10-09 US disclosed
EP-0956312-A1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR Corporation (JP) 1999-11-17 EP disclosed
WO-1998033836-A1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR CORPORATION (JP) 1998-08-06 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 CA1 4338/4885CA2 4844/4885CA9 4630/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.