SCHEMBL3844718

SCHEMBL3844718

CC=Cc1cc(C(c2ccccc2)(c2ccccc2)c2ccc(OS(=O)(=O)c3ccccc3)c(C=CC)c2)ccc1OS(=O)(=O)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 10/20 0.47
HSD11B1 P28845 1/20 0.42
HSD17B3 P37058 1/20 0.42
KMT2A Q03164 4/20 0.40
MEN1 O00255 3/20 0.40
LMNA P02545 6/20 0.38
HTT P42858 3/20 0.38
GAA P10253 2/20 0.38
MAPT P10636 8/20 0.37
NPSR1 Q6W5P4 2/20 0.37
KDM4E B2RXH2 4/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
EYA2 O00167 1/20 0.37
MAPK1 P28482 1/20 0.37
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
ALPL P05186 1/20 0.36
HPGD P15428 1/20 0.35
PKM P14618 1/20 0.34
TDP1 Q9NUW8 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3844717 1.00 ALDH1A1 (0.47) ALDH1A1HSD11B1HSD17B3KMT2AMEN1
SCHEMBL3846209 0.93 LMNA (0.47) ALDH1A1HSD11B1HSD17B3KMT2AMEN1
SCHEMBL3841089 0.88 ALDH1A1 (0.48) ALDH1A1HSD11B1HSD17B3KMT2AMEN1
SCHEMBL3841082 0.88 ALDH1A1 (0.48) ALDH1A1HSD11B1HSD17B3KMT2AMEN1
SCHEMBL3839800 0.87 CA1 (0.36) ALDH1A1HSD11B1HSD17B3SMN1; SMN2
SCHEMBL3839796 0.87 CA1 (0.36) ALDH1A1HSD11B1HSD17B3SMN1; SMN2
SCHEMBL3846211 0.85 CYP1A2 (0.40) ALDH1A1HSD11B1HSD17B3KMT2AMEN1
SCHEMBL3845302 0.85 ALDH1A1 (0.48) ALDH1A1HSD11B1HSD17B3KMT2AMEN1
SCHEMBL3845304 0.85 ALDH1A1 (0.48) ALDH1A1HSD11B1HSD17B3KMT2AMEN1
SCHEMBL3842094 0.85 CA1 (0.32) HSD11B1HSD17B3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-20050003218-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2005-01-06 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
EP-0956312-B1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR CORP (JP) 2001-10-10 EP disclosed
US-6300465-B1 Process for producing phenylene-containing polymer and film-forming material JSR CORPORATION (JP) 2001-10-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 ALDH1A1 2731/4885HSD11B1 3254/4885HSD17B3 2691/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.