Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTNNB1 | P35222 | 1/20 | 0.49 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.42 |
| ▸ | POLB | P06746 | 1/20 | 0.42 |
| ▸ | F10 | P00742 | 2/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.41 |
| ▸ | MEN1 | O00255 | 3/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.41 |
| ▸ | ELANE | P08246 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | PYGM | P11217 | 1/20 | 0.39 |
| ▸ | RXFP1 | Q9HBX9 | 1/20 | 0.39 |
| ▸ | SIRT2 | Q8IXJ6 | 1/20 | 0.38 |
| ▸ | SIRT1 | Q96EB6 | 1/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | LMNA | P02545 | 1/20 | 0.38 |
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7457156 | 0.92 | CTNNB1 (0.49) | CTNNB1RAB9AAKR1C3KDM4EPOLB | |
| SCHEMBL2483009 | 0.89 | CTNNB1 (0.51) | CTNNB1RAB9AAKR1C3KDM4EPOLB | |
| SCHEMBL3845279 | 0.88 | POLB (0.50) | CTNNB1AKR1C3POLBF10MEN1 | |
| SCHEMBL3840557 | 0.82 | GAA (0.44) | AKR1C3F10SMN1; SMN2MEN1KMT2A | |
| SCHEMBL3845199 | 0.81 | CTNNB1 (0.53) | CTNNB1RAB9AKDM4ESMN1; SMN2MEN1 | |
| SCHEMBL3842603 | 0.80 | CTNNB1 (0.49) | CTNNB1RAB9AKDM4EPOLBSMN1; SMN2 | |
| SCHEMBL13682882 | 0.80 | POLB (0.65) | CTNNB1RAB9AKDM4EPOLBSMN1; SMN2 | |
| SCHEMBL466194 | 0.80 | CTNNB1 (0.71) | CTNNB1RAB9AKDM4ESMN1; SMN2MEN1 | |
| SCHEMBL29363351 | 0.79 | MAOB (0.53) | CTNNB1KDM4EPOLBF10SMN1; SMN2 | |
| SCHEMBL28539202 | 0.79 | MAOB (0.53) | CTNNB1KDM4EPOLBF10SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6884862-B2 | Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film | JSR CORPORATION (JP) | 2005-04-26 | — | — | US | claimed |
| US-7556860-B2 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2009-07-07 | — | — | US | disclosed |
| EP-1245638-B1 | Composition for insulating film formation | JSR CORP (JP) | 2009-01-14 | — | — | EP | disclosed |
| EP-1298176-B1 | Stacked film insulating film and substrate for semiconductor | JSR CORP (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-20060216531-A1 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2006-09-28 | — | — | US | disclosed |
| US-20060210812-A1 | Insulating film and method of forming the same | JSR CORPORATION (JP) | 2006-09-21 | — | — | US | disclosed |
| EP-1696478-A1 | INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-08-30 | — | — | EP | disclosed |
| EP-1679184-A1 | LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-07-12 | — | — | EP | disclosed |
| US-6884862-B2 | Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film | JSR CORPORATION (JP) | 2005-04-26 | — | — | US | disclosed |
| US-6852370-B2 | Composition for film formation and material for insulating film formation | JSR CORPORATION (JP) | 2005-02-08 | — | — | US | disclosed |
| US-6824833-B2 | STACKED DIELECTRIC | JSR CORPORATION (JP) | 2004-11-30 | — | — | US | disclosed |
| EP-1254917-B1 | Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film | JSR CORP (JP) | 2004-06-30 | — | — | EP | disclosed |
| US-20030077461-A1 | Stacked film, insulating film and substrate for semiconductor | JSR CORPORATION (JP) | 2003-04-24 | — | — | US | disclosed |
| EP-1298176-A2 | Stacked film insulating film and substrate for semiconductor | JSR Corporation (JP) | 2003-04-02 | — | — | EP | disclosed |
| EP-1254917-A1 | Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film | JSR Corporation (JP) | 2002-11-06 | — | — | EP | disclosed |
| US-20020161173-A1 | Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-10-31 | — | — | US | disclosed |
| EP-1245638-A1 | Composition for insulating film formation | JSR Corporation (JP) | 2002-10-02 | — | — | EP | disclosed |