Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RAPGEF4 | Q8WZA2 | 1/20 | 0.45 |
| ▸ | FFAR4 | Q5NUL3 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.41 |
| ▸ | GAA | P10253 | 2/20 | 0.41 |
| ▸ | MEN1 | O00255 | 4/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.40 |
| ▸ | CA12 | O43570 | 2/20 | 0.39 |
| ▸ | CA2 | P00918 | 2/20 | 0.39 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.39 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | HTT | P42858 | 1/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.39 |
| ▸ | ESR1 | P03372 | 1/20 | 0.38 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.38 |
| ▸ | P2RY12 | Q9H244 | 1/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28584784 | 0.87 | RAPGEF4 (0.53) | RAPGEF4FFAR4SMN1; SMN2GAAMEN1 | |
| SCHEMBL3842864 | 0.81 | MEN1 (0.48) | SMN1; SMN2GAAMEN1KMT2AKEAP1 | |
| SCHEMBL3843434 | 0.81 | GAA (0.43) | RAPGEF4FFAR4SMN1; SMN2GAAMEN1 | |
| SCHEMBL13608636 | 0.79 | KMT2A (0.46) | SMN1; SMN2GAAMEN1KMT2AKEAP1 | |
| SCHEMBL3838156 | 0.77 | FFAR4 (0.45) | RAPGEF4FFAR4SMN1; SMN2GAAMEN1 | |
| SCHEMBL15249770 | 0.76 | RAPGEF4 (0.57) | RAPGEF4FFAR4SMN1; SMN2GAAMEN1 | |
| SCHEMBL28115946 | 0.75 | FFAR4 (0.51) | FFAR4SMN1; SMN2CA12CA2KEAP1 | |
| SCHEMBL3838158 | 0.74 | KMT2A (0.42) | RAPGEF4SMN1; SMN2GAAMEN1KMT2A | |
| SCHEMBL3842461 | 0.74 | FFAR4 (0.42) | RAPGEF4FFAR4SMN1; SMN2GAAMEN1 | |
| SCHEMBL6935683 | 0.73 | KMT2A (0.51) | SMN1; SMN2GAAMEN1KMT2ACA12 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7556860-B2 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2009-07-07 | — | — | US | disclosed |
| EP-1245638-B1 | Composition for insulating film formation | JSR CORP (JP) | 2009-01-14 | — | — | EP | disclosed |
| EP-1188807-B1 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORP (JP) | 2007-10-17 | — | — | EP | disclosed |
| EP-1298176-B1 | Stacked film insulating film and substrate for semiconductor | JSR CORP (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-7153767-B2 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORPORATION (JP) | 2006-12-26 | — | — | US | disclosed |
| US-20060216531-A1 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2006-09-28 | — | — | US | disclosed |
| US-20060210812-A1 | Insulating film and method of forming the same | JSR CORPORATION (JP) | 2006-09-21 | — | — | US | disclosed |
| EP-1696478-A1 | INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-08-30 | — | — | EP | disclosed |
| EP-1679184-A1 | LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-07-12 | — | — | EP | disclosed |
| US-6852370-B2 | Composition for film formation and material for insulating film formation | JSR CORPORATION (JP) | 2005-02-08 | — | — | US | disclosed |
| US-20050003218-A1 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORPORATION (JP) | 2005-01-06 | — | — | US | disclosed |
| US-6824833-B2 | STACKED DIELECTRIC | JSR CORPORATION (JP) | 2004-11-30 | — | — | US | disclosed |
| US-20030077461-A1 | Stacked film, insulating film and substrate for semiconductor | JSR CORPORATION (JP) | 2003-04-24 | — | — | US | disclosed |
| EP-1298176-A2 | Stacked film insulating film and substrate for semiconductor | JSR Corporation (JP) | 2003-04-02 | — | — | EP | disclosed |
| US-20020172652-A1 | Composition for film formation and material for insulating film formation | JSR CORPORATION (JP) | 2002-11-21 | — | — | US | disclosed |
| EP-1245638-A1 | Composition for insulating film formation | JSR Corporation (JP) | 2002-10-02 | — | — | EP | disclosed |
| US-20020064953-A1 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORPORATION (JP) | 2002-05-30 | — | — | US | disclosed |
| EP-1188807-A2 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR Corporation (JP) | 2002-03-20 | — | — | EP | disclosed |
| EP-0956312-B1 | PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL | JSR CORP (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-6300465-B1 | Process for producing phenylene-containing polymer and film-forming material | JSR CORPORATION (JP) | 2001-10-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20020172652-A1 | Composition for film formation and material for insulating film formation | VCL, BMI1, PUF60 | RAPGEF4 1616/4885FFAR4 3823/4885SMN1; SMN2 3834/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.