SCHEMBL384443

SCHEMBL384443

O=S(=O)(ON=C(c1ccccc1)C(F)(F)F)c1ccc2ccccc2c1

nearest known ligand 0.54

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.54
LMNA P02545 2/20 0.54
ALDH1A1 P00352 2/20 0.50
KDM4E B2RXH2 1/20 0.50
KAT6A Q92794 6/20 0.42
F2 P00734 5/20 0.40
PRSS1 P07477 3/20 0.40
PRSS2 P07478 3/20 0.40
PRSS3 P35030 3/20 0.40
PTPN1 P18031 1/20 0.39
TMPRSS6 Q8IU80 1/20 0.38
ENPP3 O14638 1/20 0.38
ENPP1 P22413 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL545473 1.00 MAPT (0.54) MAPTLMNAALDH1A1KDM4EKAT6A
SCHEMBL546415 0.87 MAPT (0.47) MAPTLMNAALDH1A1KDM4EKAT6A
SCHEMBL14454589 0.83 MAPT (0.44) MAPTLMNAALDH1A1KDM4EKAT6A
SCHEMBL3367772 0.82 KDM4E (0.42) MAPTLMNAALDH1A1KDM4E
SCHEMBL30098757 0.82 MAPT (0.46) MAPTLMNAALDH1A1KDM4EKAT6A
SCHEMBL383951 0.82 MAPT (0.46) MAPTLMNAALDH1A1KDM4EKAT6A
SCHEMBL546392 0.82 MAPT (0.46) MAPTLMNAALDH1A1KDM4EKAT6A
SCHEMBL546375 0.82 GAA (0.44) MAPTLMNAALDH1A1KDM4E
SCHEMBL383221 0.82 GAA (0.44) MAPTLMNAALDH1A1KDM4E
SCHEMBL16063707 0.81 LMNA (0.42) MAPTLMNAALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 251 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4050054-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHINETSU CHEMICAL CO (JP) 2025-04-23 EP disclosed
US-20230176479-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-08 US disclosed
EP-4167028-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-19 EP disclosed
CN-115885217-A Negative resist film laminate and pattern forming method 信越化学工业株式会社 2023-03-31 CN disclosed
US-20220382157-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-01 US disclosed
US-11460774-B2 Photosensitive resin composition, photosensitive dry film, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-10-04 US disclosed
EP-4050054-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2022-08-31 EP disclosed
US-11256174-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-02-22 US disclosed
EP-3671345-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2022-02-02 EP disclosed
US-20040068124-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-04-08 US disclosed
EP-1403295-A2 Ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-03-31 EP disclosed
US-6713612-B2 Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-03-30 US disclosed
US-20040033432-A1 Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-19 US disclosed
US-20040033440-A1 Photoacid generators, chemically amplified positive resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-19 US disclosed
US-6689530-B2 ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-10 US disclosed
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-25 US disclosed
US-6512020-B1 Photosensitive acid-donors in chemically amplified resist formulations. activated by irradiation with actinic electromagnetic radiation and electron beams. CIBA SPECIALTY CHEMICALS CORPORATION 2003-01-28 US disclosed
US-6261738-B1 LATENT CURING CATALYSTS FOR PHOTORESISTS SUCH AS 2,2,2-TRIFLUORO-1-PHENYL-ETHANONE OXIME-O-METHYL SULFONATE CIBA SPECIALTY CHEMICALS CORPORATION 2001-07-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20040033432-A1 Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process POLL, PIM3, VEGFA MAPT 3643/4885LMNA 1744/4885ALDH1A1 3337/4885
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process VEGFA, DNMT3A, PIM3 MAPT 4240/4885LMNA 815/4885ALDH1A1 3469/4885
US-20040068124-A1 Novel ester compounds, polymers, resist compositions and patterning process DHCR24, EEF1D, MUS81 MAPT 3391/4885LMNA 1555/4885ALDH1A1 1540/4885
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process CACNA1A, KCNA1, POLL MAPT 4758/4885LMNA 2767/4885ALDH1A1 893/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.