SCHEMBL3845313

SCHEMBL3845313

C#Cc1ccc(NC(=O)c2ccc(C#C)cc2)cc1

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 3/20 0.57
RAB9A P51151 3/20 0.57
MEN1 O00255 2/20 0.57
POLB P06746 2/20 0.57
KMT2A Q03164 2/20 0.57
LMNA P02545 1/20 0.57
PKM P14618 1/20 0.57
APEX1 P27695 1/20 0.57
TDP1 Q9NUW8 1/20 0.57
TRPV1 Q8NER1 1/20 0.53
KDM4E B2RXH2 2/20 0.53
MLYCD O95822 1/20 0.53
GAA P10253 1/20 0.52
L3MBTL1 Q9Y468 1/20 0.52
PTPN1 P18031 3/20 0.52
TP53 P04637 1/20 0.52
ALOX15 P16050 1/20 0.52
SMN1; SMN2 Q16637 1/20 0.52
F10 P00742 1/20 0.51
MITF O75030 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4312329 1.00 NPC1 (0.57) NPC1RAB9AMEN1POLBKMT2A
SCHEMBL4557144 0.94 PTPN1 (0.61) NPC1RAB9AMEN1POLBKMT2A
SCHEMBL836871 0.91 RAB9A (0.73) NPC1RAB9AMEN1KMT2ALMNA
SCHEMBL13692706 0.91 HDAC3 (0.53) NPC1RAB9AMEN1POLBKMT2A
SCHEMBL836623 0.91 PTPN1 (0.67) NPC1RAB9AMEN1POLBKMT2A
SCHEMBL13692707 0.91 HDAC3 (0.53) NPC1RAB9AMEN1POLBKMT2A
SCHEMBL14072817 0.91 PTPN1 (0.65) NPC1RAB9AMEN1POLBKMT2A
SCHEMBL4316729 0.85 KMT2A (0.62) NPC1RAB9AMEN1POLBKMT2A
SCHEMBL13132746 0.83 MEN1 (0.64) MEN1POLBKMT2ALMNAPKM
SCHEMBL13132581 0.83 L3MBTL1 (0.60) MEN1POLBKMT2APKMTRPV1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US claimed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
EP-1099719-B1 Diyne-containing (co) polymer, processes for producing the same, and cured film JSR CORP (JP) 2007-01-17 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-6528605-B1 Diyne-containing (co)polymer, processes for producing the same, and cured film JSR CORPORATION (JP) 2003-03-04 US disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1254917-A1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR Corporation (JP) 2002-11-06 EP disclosed
US-20020161173-A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2002-10-31 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
EP-1099719-A1 Diyne-containing (co) polymer, processes for producing the same, and cured film JSR Corporation (JP) 2001-05-16 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 NPC1 3853/4885RAB9A 3272/4885MEN1 4309/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.