SCHEMBL384538

SCHEMBL384538

O=S(=O)([O-])c1c(F)c(F)c(F)c(F)c1F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CA1 P00915 12/20 0.38
CA2 P00918 12/20 0.38
CA12 O43570 8/20 0.38
CA7 P43166 8/20 0.38
CA13 Q8N1Q1 8/20 0.38
HDAC11 Q96DB2 1/20 0.33
HDAC8 Q9BY41 1/20 0.33
HDAC6 Q9UBN7 1/20 0.33
TTR P02766 1/20 0.33
GAA P10253 1/20 0.32
PKM P14618 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
(Phenylsulfinyl)Benzene SCHEMBL7617255 0.93 CA1 (0.34) CA1CA2CA12CA7CA13
SCHEMBL3126164 0.93 PKM (0.37) CA1CA2CA12CA7CA13
SCHEMBL3136606 0.93 PKM (0.37) CA1CA2CA12CA7CA13
SCHEMBL3134959 0.90 FLT1 (0.36) CA1CA2CA12CA7CA13
SCHEMBL3139783 0.90 ESR1 (0.36) CA1CA2CA12CA7CA13
SCHEMBL4423392 0.90 ESR1 (0.36) CA1CA2CA12CA7CA13
SCHEMBL3139912 0.90 FLT1 (0.36) CA1CA2CA12CA7CA13
SCHEMBL3132773 0.90 CA12 (0.36) CA1CA2CA12HDAC11HDAC8
SCHEMBL3135484 0.90 CA12 (0.36) CA1CA2CA12HDAC11HDAC8
SCHEMBL5429763 0.89 CA1 (0.42) CA1CA2CA12CA7CA13

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 398 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US claimed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US claimed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US claimed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP claimed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US claimed
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
CN-109563371-B Polysiloxane composition comprising acetal-protected silanol groups 日产化学株式会社 2021-09-21 CN disclosed
US-20190185707-A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2019-06-20 US disclosed
US-10191371-B2 Underlayer composition and method of imaging underlayer ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-01-29 US disclosed
US-20020015916-A1 POSITIVE RESIST COMPOSITION FUJI PHOTO FILM CO., LTD. (JP) 2002-02-07 US disclosed
US-20010055726-A1 Positive radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2001-12-27 US disclosed
US-20010036590-A1 Chemical amplification type negative-working resist composition for electron beams or X-rays FUJIFILM CORPORATION (JP) 2001-11-01 US disclosed
US-6265135-B1 ARYL SULFONIUM OR IODONIUM COMPOUND WHICH GENERATES BENZENE-, NAPHTHALENE- OR ANTHRACENESULFONIC ACID WHICH IS SUBSTITUTED BY AT LEAST ONE FLUORINE ATOM AND/OR AT LEAST ONE GROUP CONTAINING A FLUORINE ATOM. FUJI PHOTO FILM CO., LTD. (JP) 2001-07-24 US disclosed
EP-1117004-A2 Electron beam or x-ray negative-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-07-18 EP disclosed
EP-1117002-A1 Negative-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-07-18 EP disclosed
EP-1109066-A1 Chemical amplification type negative-working resist composition for electron beams or x-rays FUJI PHOTO FILM CO., LTD. (JP) 2001-06-20 EP disclosed
EP-1076261-A1 Negative resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-02-14 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 CA1 2755/4885CA2 2513/4885CA12 3278/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 CA1 3683/4885CA2 4815/4885CA12 2739/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.