SCHEMBL384887

SCHEMBL384887

OC(F)(F)C(F)([C]1CCCCC1)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1171187 0.74 NR1H2 (0.32)
SCHEMBL28087155 0.67
SCHEMBL5281396 0.67
SCHEMBL288790 0.66 ALDH1A1 (0.32)
SCHEMBL7775536 0.66 ALDH1A1 (0.32)
SCHEMBL1886237 0.62
SCHEMBL3656726 0.61
SCHEMBL8356448 0.61
SCHEMBL4165056 0.61 TSHR (0.30)
SCHEMBL17474465 0.60

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2482132-B1 Resist pattern forming process SHINETSU CHEMICAL CO (JP) 2019-10-16 EP disclosed
US-9057949-B2 Patterning process, resist composition, polymer, and polymerizable ester compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-16 US disclosed
US-8703384-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-22 US disclosed
US-20130157194-A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-20 US disclosed
US-8426110-B2 Chemically amplified positive resist composition, patterning process, and acid-decomposable keto ester compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-23 US disclosed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US disclosed
US-8268528-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-18 US disclosed
US-20120225386-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-06 US disclosed
US-8252504-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-28 US disclosed
US-20120214100-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-23 US disclosed
EP-2090598-A1 Polymer, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-08-19 EP disclosed
US-7537880-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-26 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20090081588-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080118860-A1 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-22 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080090173-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. 2008-04-17 US disclosed
US-20080090172-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-17 US disclosed