SCHEMBL3881802

SCHEMBL3881802

CCC(C)(CC)OC(=O)C1CC2C=CC1C2

nearest known ligand 0.44

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.44
LMNA P02545 1/20 0.44
ALDH1A1 P00352 8/20 0.42
HPGD P15428 1/20 0.40
POLB P06746 3/20 0.39
KMT2A Q03164 2/20 0.39
RAB9A P51151 1/20 0.39
APEX1 P27695 1/20 0.38
RECQL P46063 1/20 0.38
BLM P54132 1/20 0.38
ESR2 Q92731 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
MAPK1 P28482 1/20 0.36
THRB P10828 1/20 0.33
EPHX2 P34913 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22263705 0.89 ALDH1A1 (0.38) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL1409796 0.88 KDM4E (0.44) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL11330968 0.84 KDM4E (0.44) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL14534917 0.83 KDM4E (0.49) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL14628488 0.83 KDM4E (0.49) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL525537 0.83 KDM4E (0.49) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL30862606 0.83 KDM4E (0.49) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL22263685 0.83 ALDH1A1 (0.40) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL11330697 0.83 KDM4E (0.42) KDM4ELMNAALDH1A1HPGDPOLB
SCHEMBL5377889 0.83 ALDH1A1 (0.46) KDM4ELMNAALDH1A1HPGDPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11886119-B2 Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2024-01-30 US disclosed
CN-110709774-B Underlayer film forming material, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2023-12-08 CN disclosed
US-20230185195-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2023-06-15 US disclosed
US-11599025-B2 Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2023-03-07 US disclosed
US-20200264511-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-08-20 US disclosed
EP-3693793-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR PRODUCING RESIST UNDERLAYER FILM, AND LAYERED PRODUCT Mitsui Chemicals, Inc. (JP) 2020-08-12 EP disclosed
US-20200241419-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-07-30 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed