SCHEMBL3889871

SCHEMBL3889871

Cc1ccc(S(=O)(=O)Oc2c(F)cc(CCCc3cc(F)c(OS(=O)(=O)c4ccc(C)cc4)c(F)c3)cc2F)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.41
CYP3A4 P08684 1/20 0.41
CYP2C9 P11712 1/20 0.41
CYP2C19 P33261 1/20 0.41
P2RY12 Q9H244 1/20 0.39
KMT2A Q03164 4/20 0.39
MEN1 O00255 3/20 0.39
PTGS2 P35354 2/20 0.38
CA12 O43570 2/20 0.38
CA2 P00918 2/20 0.38
KEAP1 Q14145 1/20 0.38
NFE2L2 Q16236 1/20 0.38
LMNA P02545 1/20 0.38
MAPT P10636 1/20 0.38
HTT P42858 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
NPC1 O15118 1/20 0.37
PTGS1 P23219 1/20 0.37
ENPP1 P22413 1/20 0.37
ESR1 P03372 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3841176 0.83 KMT2A (0.42) ALDH1A1CYP3A4CYP2C9CYP2C19KMT2A
SCHEMBL4126761 0.83 KMT2A (0.43) ALDH1A1P2RY12KMT2AMEN1PTGS2
SCHEMBL952515 0.74 KEAP1 (0.45) ALDH1A1KMT2AMEN1CA12CA2
SCHEMBL28584784 0.74 RAPGEF4 (0.53) ALDH1A1CYP2C19KMT2AMEN1CA12
SCHEMBL3843178 0.73 KEAP1 (0.41) ALDH1A1CYP3A4CYP2C19KMT2AMEN1
SCHEMBL10179898 0.72 FUT7 (0.57) CYP2C9CYP2C19KMT2AMEN1CA12
SCHEMBL26624926 0.72 FUT7 (0.61) CYP2C9CYP2C19KMT2AMEN1CA12
SCHEMBL3843434 0.72 GAA (0.43) ALDH1A1CYP3A4CYP2C9CYP2C19P2RY12
SCHEMBL3889866 0.71 MAPT (0.38) ALDH1A1CYP3A4CYP2C9CYP2C19P2RY12
SCHEMBL3839008 0.70 KEAP1 (0.41) ALDH1A1KMT2AMEN1PTGS2KEAP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-20050003218-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2005-01-06 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
EP-0956312-B1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR CORP (JP) 2001-10-10 EP disclosed
US-6300465-B1 Process for producing phenylene-containing polymer and film-forming material JSR CORPORATION (JP) 2001-10-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 ALDH1A1 2731/4885CYP3A4 1204/4885CYP2C9 795/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.