⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3956167 | 0.77 | — | — | |
| SCHEMBL3946230 | 0.75 | — | — | |
| SCHEMBL1532592 | 0.75 | — | — | |
| SCHEMBL263760 | 0.73 | — | — | |
| SCHEMBL6563141 | 0.73 | — | — | |
| SCHEMBL1536174 | 0.73 | — | — | |
| SCHEMBL6564151 | 0.73 | ADRB2 (0.36) | — | |
| SCHEMBL6562417 | 0.71 | — | — | |
| SCHEMBL6562976 | 0.71 | — | — | |
| SCHEMBL1536165 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10818493-B2 | Silicon-based hardmask | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-10-27 | — | — | US | disclosed |
| US-20190115209-A1 | SILICON-BASED HARDMASK | ROHM & HAAS ELECT MAT (US) | 2019-04-18 | — | — | US | disclosed |
| US-10186424-B2 | Silicon-based hardmask | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-01-22 | — | — | US | disclosed |
| US-20180366319-A1 | SILICON-BASED HARDMASK | ROHM & HAAS ELECT MAT (US) | 2018-12-20 | — | — | US | disclosed |
| US-7556860-B2 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2009-07-07 | — | — | US | disclosed |
| US-7439315-B2 | Polymer film and method for producing the same | NEC CORPORATION (JP) | 2008-10-21 | — | — | US | disclosed |
| US-20060216531-A1 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2006-09-28 | — | — | US | disclosed |
| EP-1679184-A1 | LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-07-12 | — | — | EP | disclosed |
| US-20060052560-A1 | Polymer film and method for producing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2006-03-09 | — | — | US | disclosed |
| US-20050059788-A1 | Supplying raw material gas containing acetylenic compound in chamber under low pressure; activation of gas in plasma generated reaction chamber, depositing on surface of semiconductor; addition polymerization; high mechanical strength | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-03-17 | — | — | US | disclosed |
| EP-1122746-B1 | Composition for film formation and insulating film | JSR CORP (JP) | 2004-09-22 | — | — | EP | disclosed |
| US-6468589-B2 | A HEAT-CURED POLYETHER BASED ON A 9,9-BIS(P-HYDROXYPHENYL)-FLUORENE HAVING AT LEAST ONE ALKYL SUBSTITUENT AND A DIHYDROXY AROMATIC COMONOMER; LOW DIELECTRIC PROTECTIVE COATINGS; HEAT RESISTANCE; NONCRACKING | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010012870-A1 | Composition for film formation and insulating film | JSR CORPORATION (JP) | 2001-08-09 | — | — | US | disclosed |
| EP-1122746-A1 | Composition for film formation and insulating film | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |