SCHEMBL3951271

SCHEMBL3951271

C=C(C)C(=O)OCC(CC)C1CCO1

nearest known ligand 0.46

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.46
ALDH1A1 P00352 1/20 0.45
THRB P10828 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27818479 0.88 ALDH1A1 (0.51) TSHRALDH1A1THRB
SCHEMBL3949260 0.81 TSHR (0.53) TSHRALDH1A1THRB
SCHEMBL3951773 0.79 TSHR (0.46) TSHRALDH1A1THRB
SCHEMBL2221146 0.77 TSHR (0.47) TSHRALDH1A1THRB
SCHEMBL28557621 0.76 ALDH1A1 (0.49) TSHRALDH1A1THRB
SCHEMBL27604244 0.75 TSHR (0.49) TSHRALDH1A1THRB
SCHEMBL10002688 0.74 TSHR (0.44) TSHRALDH1A1THRB
SCHEMBL27884722 0.73 HPGD (0.30)
SCHEMBL27819596 0.73 ALDH1A1 (0.49) TSHRALDH1A1THRB
SCHEMBL19718993 0.72 TSHR (0.42) TSHRALDH1A1THRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7488569-B2 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2009-02-10 US disclosed
US-20060263723-A1 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2006-11-23 US disclosed
US-7122288-B2 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2006-10-17 US disclosed
US-20020177070-A1 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2002-11-28 US disclosed