Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
| ▸ | CA2 | P00918 | 1/20 | 0.33 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23521455 | 0.90 | CA2 (0.42) | CA1CA2 | |
| SCHEMBL5417921 | 0.88 | SLC2A1 (0.35) | — | |
| SCHEMBL10610942 | 0.88 | TDP1 (0.41) | — | |
| SCHEMBL210198 | 0.87 | CA4 (0.36) | CA1CA2ENPP2 | |
| SCHEMBL5417930 | 0.86 | — | — | |
| SCHEMBL5421419 | 0.84 | ESR1 (0.33) | — | |
| SCHEMBL23000909 | 0.84 | CA1 (0.45) | CA1CA2 | |
| SCHEMBL5421239 | 0.82 | — | — | |
| SCHEMBL1448791 | 0.82 | ALDH1A1 (0.44) | — | |
| SCHEMBL23493424 | 0.81 | MAPT (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | claimed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | claimed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | claimed |
| US-7381659-B2 | Method for reducing film stress for SiCOH low-k dielectric materials | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | claimed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | claimed |
| US-20070117408-A1 | METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-05-24 | — | — | US | claimed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | claimed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | claimed |
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | disclosed |
| US-20110101489-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-05 | — | — | US | disclosed |
| US-7892648-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-02-22 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |
| US-6780471-B2 | USING CROSSLINKER WITH NONFLEXIBLE LINKAGE INCLUDING AT LEAST ONE P-ARYLENE MOIETY FOR SPATIAL SEPARATION; FLEXURAL STRENGTH, FRACTURE TOUGHNESS, MODULUS AND/OR MECHANICAL DAMPING | DOW CORNING CORPORATION | 2004-08-24 | — | — | US | disclosed |
| US-20030130389-A1 | Curable silicone resin composition and reactive silicon compounds | DOW CORNING LIMITED (GB) | 2003-07-10 | — | — | US | disclosed |
| EP-1276807-A1 | CURABLE SILICONE RESIN COMPOSITION AND REACTIVE SILICON COMPOUNDS | Dow Corning Corporation (US) | 2003-01-22 | — | — | EP | disclosed |
| WO-2001083608-A1 | CURABLE SILICONE RESIN COMPOSITION AND REACTIVE SILICON COMPOUNDS | DOW CORNING CORPORATION (US) | 2001-11-08 | — | — | WO | disclosed |