⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30900645 | 0.82 | — | — | |
| SCHEMBL29889134 | 0.71 | — | — | |
| SCHEMBL38654827 | 0.71 | — | — | |
| SCHEMBL6559802 | 0.71 | — | — | |
| SCHEMBL23794408 | 0.50 | — | — | |
| Water SCHEMBL490048 | 0.50 | — | — | |
| SCHEMBL19837258 | 0.50 | — | — | |
| SCHEMBL7199395 | 0.50 | — | — | |
| SCHEMBL1629906 | 0.50 | — | — | |
| Fluoride Ion SCHEMBL73611 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 631 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122094224-A | Method for preparing horizontal heterojunction photoelectric detector matrix based on single crystal nanoribbon | — | 2026-05-26 | — | — | CN | claimed |
| CN-117238978-B | Self-driven wide-spectrum photoelectric detector and preparation method thereof | UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122025493-A | Electron emission structure, preparation method thereof and photoelectron source | 华南师范大学 | 2026-05-12 | — | — | CN | claimed |
| EP-4718976-A1 | BACK END OF LINE COMPATIBLE FERROELECTRIC FIELD EFFECT TRANSISTOR TUNABLE PROBABILISTIC ELEMENT | IMEC vzw (BE) | 2026-04-01 | — | — | EP | claimed |
| US-20260075841-A1 | MEMORY DEVICE | KIOXIA CORPORATION (JP) | 2026-03-12 | — | — | US | claimed |
| CN-117720102-B | Preparation method of suspended two-dimensional film and application of suspended two-dimensional film to nano-meter electromagnetic pressure sensor | 北京理工大学 | 2026-02-27 | — | — | CN | claimed |
| US-20260052922-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | NATIONAL TSING HUA UNIVERSITY (TW) | 2026-02-19 | — | — | US | claimed |
| US-12550388-B2 | Semiconductor device including 2D material layers | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-02-10 | — | — | US | claimed |
| US-20250372521-A1 | INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-04 | — | — | US | claimed |
| US-12453290-B2 | Memory cell, memory device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-21 | — | — | US | claimed |
| US-20180375282-A1 | TWO-DIMENSIONAL SEMICONDUCTOR SATURABLE ABSORBER MIRROR AND FABRICATION METHOD, AND PULSE FIBER LASER | UNIV SHENZHEN (CN) | 2018-12-27 | — | — | US | claimed |
| US-20180240607-A1 | PEROVSKITE COMPOSITE STRUCTURE | WINBOND ELECTRONICS CORP. (TW) | 2018-08-23 | — | — | US | claimed |
| US-10056430-B1 | MRAM with voltage dependent in-plane magnetic anisotropy | SANDISK TECHNOLOGIES LLC (US) | 2018-08-21 | — | — | US | claimed |
| US-9595624-B2 | Strain engineered bandgaps | MASSACHUSSETS INSTITUTE OF TECHNOLOGY (US) | 2017-03-14 | — | — | US | claimed |
| US-9356178-B2 | Plasmonic phototransistor | UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. (US) | 2016-05-31 | — | — | US | claimed |
| US-20150109606-A1 | PLASMONIC PHOTOTRANSISTOR | UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. | 2015-04-23 | — | — | US | claimed |
| WO-2014012024-A2 | STRAIN ENGINEERED BAND GAPS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2014-01-16 | — | — | WO | claimed |
| US-20140017839-A1 | STRAIN-ENGINEERED BANDGAPS | PEKING UNIVERSITY (CN) | 2014-01-16 | — | — | US | claimed |
| US-20060014365-A1 | Method for fabricating a semiconductor element from a dispersion of semiconductor particles | SEIKO EPSON CORPORATION (JP) | 2006-01-19 | — | — | US | claimed |
| US-6372681-B1 | METALLOCENE OF TRANSITION METAL AND; METAL OXIDE, SULFIDE, PHOSPHIDE, CARBIDE, NITRIDE, AND/OR SELENIDE; ORGANOALKALINE EARTH OR ZINC COMPOUND; AND ORGANOALUMINUM COMPOUND | TOSOH CORPORATION (JP) | 2002-04-16 | — | — | US | claimed |