⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23375214 | 0.89 | — | — | |
| SCHEMBL36464 | 0.87 | — | — | |
| SCHEMBL25223707 | 0.82 | — | — | |
| SCHEMBL17866181 | 0.75 | — | — | |
| SCHEMBL2022399 | 0.75 | — | — | |
| SCHEMBL1889452 | 0.75 | — | — | |
| SCHEMBL1260731 | 0.75 | — | — | |
| SCHEMBL484009 | 0.75 | — | — | |
| SCHEMBL22076973 | 0.75 | — | — | |
| SCHEMBL492830 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 3057 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12628415-B2 | Post-replacement metal gate (RMG) gate cut for performance enhanced FinFET | QUALCOMM INCORPORATED (US) | 2026-05-12 | — | — | US | claimed |
| US-20260113968-A1 | NITRIDE SEMICONDUCTOR TRANSISTOR | SUMITOMO ELECTRIC INDUSTRIES (JP) | 2026-04-23 | — | — | US | claimed |
| US-20260068546-A1 | MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE | APPLIED MATERIALS, INC. (US) | 2026-03-05 | — | — | US | claimed |
| US-12568812-B2 | Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2026-03-03 | — | — | US | claimed |
| US-20260047175-A1 | SEMICONDUCTOR DEVICES HAVING IMPROVED CURRENT/VOLTAGE CHARACTERISTICS AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-02-12 | — | — | US | claimed |
| EP-4652625-A1 | N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE CUT FOR PERFORMANCE ENHANCED FINFET | QUALCOMM INCORPORATED (US) | 2025-11-26 | — | — | EP | claimed |
| US-12484232-B2 | Ferroelectric memory device and method of fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-25 | — | — | US | claimed |
| US-20250359281-A1 | GATE STRUCTURE WITH OXYGEN BARRIER AND METHODS FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| US-20250359156-A1 | TRANSISTOR STRUCTURE HAVING REDUCED CONTACT RESISTANCE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| US-20250357321-A1 | BACK-END-OF-LINE CMOS INVERTER HAVING REDUCED SIZE AND REDUCED SHORT-CHANNEL EFFECTS AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| WO-2008054689-A1 | METHODS OF FORMING DIELECTRIC STRUCTURES IN SEMICONDUCTOR DEVICES | MICRON TECHNOLOGY, INC. (US) | 2008-05-08 | — | — | WO | claimed |
| US-20080099829-A1 | Mosfet devices and systems with nitrided gate insulators and methods for forming | MICRON TECHNOLOGY, INC. | 2008-05-01 | — | — | US | claimed |
| WO-2008039845-A2 | FLUORINE PLASMA TREATMENT OF HIGH-K GATE STACK FOR DEFECT PASSIVATION | APPLIED MATERIALS, INC. (US) | 2008-04-03 | — | — | WO | claimed |
| US-20080076268-A1 | FLUORINE PLASMA TREATMENT OF HIGH-K GATE STACK FOR DEFECT PASSIVATION | APPLIED MATERIALS, INC. | 2008-03-27 | — | — | US | claimed |
| WO-2007121007-A2 | METHOD AND APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM | APPLIED MATERIALS, INC. (US) | 2007-10-25 | — | — | WO | claimed |
| US-20070212896-A1 | METHOD AND APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM | APPLIED MATERIALS, INC. | 2007-09-13 | — | — | US | claimed |
| EP-1747580-A1 | STABILIZATION OF HIGH-K DIELECTRIC MATERIALS | Applied Materials, Inc. (US) | 2007-01-31 | — | — | EP | claimed |
| US-20060003507-A1 | Integrated circuit devices including a dual gate stack structure and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-01-05 | — | — | US | claimed |
| WO-2005117086-A1 | STABILIZATION OF HIGH-K DIELECTRIC MATERIALS | APPLIED MATERIALS, INC. (US) | 2005-12-08 | — | — | WO | claimed |
| US-20050260357-A1 | Stabilization of high-k dielectric materials | APPLIED MATERIALS, INC. | 2005-11-24 | — | — | US | claimed |