SCHEMBL4093693

SCHEMBL4093693

CCOC(OCC)[SiH2]C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ammonia Solution, Strong SCHEMBL10801236 0.97 THRB (0.42)
Piperazine SCHEMBL28971410 0.84 THRB (0.33)
SCHEMBL3420600 0.84 THRB (0.33)
Morpholine SCHEMBL28971412 0.76 MEN1 (0.41)
Thiomorpholine SCHEMBL28971399 0.76
SCHEMBL2931933 0.76 THRB (0.47)
SCHEMBL4083701 0.75
SCHEMBL4092993 0.71 ADRB2 (0.38)
SCHEMBL9068994 0.71
SCHEMBL2050944 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 108 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12062613-B2 Semiconductor device having an extra low-k dielectric layer and method of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-08-13 US claimed
CN-115678018-B Polyurethane-organic silicon resin prepolymer and preparation method and application thereof 海洋化工研究院有限公司 2023-10-20 CN claimed
US-20220359412-A1 SEMICONDUCTOR DEVICE HAVING AN EXTRA LOW-K DIELECTRIC LAYER AND METHOD OF FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2022-11-10 US claimed
US-11417602-B2 Semiconductor device having an extra low-k dielectric layer and method of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2022-08-16 US claimed
CN-108735712-B Method for forming ultra-low dielectric constant inter-metal dielectric layer 台湾积体电路制造股份有限公司 2021-07-27 CN claimed
CN-109880104-B Preparation method of phosphorus-based organic silicon type flame retardant 普信氟硅新材料(衢州)有限公司 2021-05-28 CN claimed
US-20200335449-A1 SEMICONDUCTOR DEVICE HAVING AN EXTRA LOW-K DIELECTRIC LAYER AND METHOD OF FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-10-22 US claimed
US-10707165-B2 Semiconductor device having an extra low-k dielectric layer and method of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-07-07 US claimed
CN-109880104-A A kind of preparation method of phosphorus system organic silicon type fire retardant 普信氟硅新材料(衢州)有限公司 2019-06-14 CN claimed
US-20180308801-A1 SEMICONDUCTOR DEVICE HAVING AN EXTRA LOW-K DIELECTRIC LAYER AND METHOD OF FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2018-10-25 US claimed
CN-105401131-A Method And Composition For Providing Pore Sealing Layer On Porous Low Dielectric Constant Films AIR PROD & CHEM 2016-03-16 CN claimed
CN-101775140-A Class of super heat-resistant imide aromatic heterocyclic modified silane coupling agent UNIV NANCHANG 2010-07-14 CN claimed
US-20260101742-A1 STACKING VIA CONFIGURATION FOR ADVANCED SILICON NODE PRODUCTS AND METHODS FOR FORMING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2026-04-09 US disclosed
EP-4703405-A1 CRYSTALLINE POLYOXYALKYLENE-BASED POLYMER AND CURABLE COMPOSITION COMPRISING SAME Kaneka Corporation (JP) 2026-03-04 EP disclosed
US-20260049203-A1 CURABLE COMPOSITION KANEKA NORTH AMERICA LLC (US) 2026-02-19 US disclosed
US-12519055-B2 Stacking via configuration for advanced silicon node products and methods for forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2026-01-06 US disclosed
CN-1831193-A Plating method ROHM & HAAS ELECT MAT (US) 2006-09-13 CN disclosed
CN-1775861-A Composition and method ROHM & HAAS ELECT MAT (US) 2006-05-24 CN disclosed
CN-1227311-C Coating composition for the production of insulating thin films ASAHI CHEMICAL IND (JP) 2005-11-16 CN disclosed
CN-1422310-A Coating composition for the production of insulating thin films ASAHI CHEMICAL IND (JP) 2003-06-04 CN disclosed