⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29991079 | 0.86 | — | — | |
| SCHEMBL704114 | 0.81 | — | — | |
| SCHEMBL17507889 | 0.80 | — | — | |
| SCHEMBL21081891 | 0.80 | — | — | |
| SCHEMBL27626717 | 0.79 | — | — | |
| SCHEMBL707360 | 0.78 | — | — | |
| SCHEMBL26116010 | 0.77 | THRB (0.42) | — | |
| SCHEMBL9009709 | 0.77 | THRB (0.42) | — | |
| SCHEMBL28308033 | 0.77 | — | — | |
| SCHEMBL1426823 | 0.77 | THRB (0.42) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119731271-A | Silicone resin composition | 捷恩智株式会社 | 2025-03-28 | — | — | CN | disclosed |
| CN-106497499-B | A kind of UV solidification optical cement | 南京汇鑫光电材料有限公司 | 2019-07-12 | — | — | CN | disclosed |
| CN-106752233-B | A kind of UV solidification multifunctional anti-soil agent | 北京海岩兴业混凝土外加剂销售有限公司 | 2019-01-01 | — | — | CN | disclosed |
| CN-108068561-A | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2018-05-25 | — | — | CN | disclosed |
| CN-106752233-A | A kind of UV solidifies multifunctional anti-soil agent | 山东奥蕾新材料科技有限公司 | 2017-05-31 | — | — | CN | disclosed |
| CN-106497499-A | A kind of UV solidifies optical cement | 南京汇鑫光电材料有限公司 | 2017-03-15 | — | — | CN | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8791221-B2 | Addition-curable metallosiloxane compound | DAICEL CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| EP-2650319-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | Daicel Corporation (JP) | 2013-10-16 | — | — | EP | disclosed |
| US-20130267653-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | DAICEL CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20120018761-A1 | PHOSPHOR MEMBER, METHOD OF MANUFACTURING PHOSPHOR MEMBER, AND ILLUMINATING DEVICE | KONICA MINOLTA OPTO, INC. (JP) | 2012-01-26 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |