Malic Acid

Malic Acid

SCHEMBL4142952

C[N+](C)(C)C.O=C(O)CC(O)C(=O)O

nearest known ligand 0.79

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

CACNA1CCACNA1DCACNA1FCACNA1SDRD2HTR1BHTR1DHTR1F

The experimentally established mechanism targets of Malic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.79
MAPT P10636 1/20 0.50
TET2 Q6N021 6/20 0.46
TET3 O43151 2/20 0.46
TET1 Q8NFU7 1/20 0.46
SLC22A6 Q4U2R8 1/20 0.46
KDM4A O75164 2/20 0.44
KDM4C Q9H3R0 2/20 0.44
KDM2A Q9Y2K7 2/20 0.44
OR51E2 Q9H255 1/20 0.43
TDP1 Q9NUW8 1/20 0.43
ALOX15 P16050 1/20 0.39
GABRR1 P24046 2/20 0.39
LMNA P02545 1/20 0.39
GPR84 Q9NQS5 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Malic Acid SCHEMBL18981018 0.92 SMN1; SMN2 (0.94) SMN1; SMN2MAPTTET2TET3TET1
Malic Acid SCHEMBL10573554 0.92 SMN1; SMN2 (0.94) SMN1; SMN2MAPTTET2TET3TET1
Malic Acid SCHEMBL27579591 0.89 SMN1; SMN2 (0.88) SMN1; SMN2MAPTTET2TET3TET1
Malic Acid SCHEMBL9782806 0.89 SMN1; SMN2 (0.88) SMN1; SMN2MAPTTET2TET3TET1
Malic Acid SCHEMBL27536502 0.89 SMN1; SMN2 (0.88) SMN1; SMN2MAPTTET2TET3TET1
Malic Acid SCHEMBL98496 0.89
Malic Acid SCHEMBL856 0.89
Malic Acid SCHEMBL31673489 0.89
Malic Acid SCHEMBL89131 0.89 SMN1; SMN2 (1.00) SMN1; SMN2TET2TET3TET1SLC22A6
Malic Acid SCHEMBL31673494 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20140193975-A1 COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-10 US disclosed
EP-2657240-A1 Silicon compound, silicon-containing compound, composition for forming resits underlayer film containing the same and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-10-30 EP disclosed
US-20130280912-A1 SILICON COMPOUND, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM CONTAINING THE SAME AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-24 US disclosed
US-20130059439-A1 CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT HITACHI CHEMICAL COMPANY, LTD. (JP) 2013-03-07 US disclosed
US-20120299158-A1 CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-11-29 US disclosed
US-20090214796-A1 Method for Forming Antireflection Film MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2009-08-27 US disclosed
US-20080260956-A1 Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part HITACHI CHEMICAL CO., LTD. (JP) 2008-10-23 US disclosed
EP-1890172-A1 METHOD FOR FORMING ANTIREFLECTION FILM Hitachi Chemical Co., Ltd. (JP) 2008-02-20 EP disclosed
EP-1829945-A1 FILM, SILICA FILM AND METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING SILICA FILM, AND ELECTRONIC PART Hitachi Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed
US-5933693-A Electroconductive elastic member and electrophotographic apparatus using same BRIDGESTONE CORPORATION (JP) 1999-08-03 US disclosed