SCHEMBL414934

SCHEMBL414934

c1ccc2c3c(ccc2c1)Oc1ccc2ccccc2c1C3c1c2ccccc2cc2ccccc12

nearest known ligand 0.54

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.54
CYP2C19 P33261 1/20 0.54
NPSR1 Q6W5P4 7/20 0.49
CFTR P13569 1/20 0.48
GOPC Q9HD26 1/20 0.48
ALDH1A1 P00352 2/20 0.43
HIF1A Q16665 1/20 0.43
CYP1B1 Q16678 1/20 0.43
HSD17B10 Q99714 1/20 0.43
TAAR1 Q96RJ0 1/20 0.42
NPC1 O15118 1/20 0.42
POLB P06746 1/20 0.42
RAB9A P51151 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17207358 0.89 CYP1A2 (0.46) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL17207899 0.87 CYP1A2 (0.43) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL21971796 0.83 NPSR1 (0.51) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL414941 0.83 CYP1A2 (0.49) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL415460 0.81 NPSR1 (0.68) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL21971092 0.81 NPSR1 (0.50) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL414309 0.81 NPSR1 (0.52) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL416279 0.80 CYP1A2 (0.53) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL21971124 0.78 NPSR1 (0.50) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL22167537 0.78 CYP1A2 (0.44) CYP1A2CYP2C19NPSR1CFTRGOPC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9045587-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-9045587-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-20140363768-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-20140363768-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-8846846-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-30 US disclosed
US-8846846-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-30 US disclosed
US-20120064725-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-15 US disclosed
US-20120064725-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-15 US disclosed