Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPSR1 | Q6W5P4 | 15/20 | 0.68 |
| ▸ | CFTR | P13569 | 1/20 | 0.67 |
| ▸ | GOPC | Q9HD26 | 1/20 | 0.67 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.54 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.54 |
| ▸ | LMNA | P02545 | 2/20 | 0.52 |
| ▸ | POLB | P06746 | 1/20 | 0.50 |
| ▸ | HPGD | P15428 | 1/20 | 0.49 |
| ▸ | MAPT | P10636 | 1/20 | 0.48 |
| ▸ | HTT | P42858 | 1/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21971125 | 0.90 | NPSR1 (0.58) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL24224558 | 0.90 | NPSR1 (0.58) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL25706841 | 0.87 | NPSR1 (0.55) | NPSR1CFTRGOPCLMNAPOLB | |
| SCHEMBL2612448 | 0.86 | NPSR1 (0.57) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL28473778 | 0.86 | NPSR1 (0.54) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL28470714 | 0.86 | NPSR1 (0.54) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL28472500 | 0.86 | NPSR1 (0.54) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL28476460 | 0.86 | MEN1 (0.59) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL21971720 | 0.86 | NPSR1 (0.54) | NPSR1CFTRGOPCCYP1A2CYP2C19 | |
| SCHEMBL21971091 | 0.86 | NPSR1 (0.54) | NPSR1CFTRGOPCCYP1A2CYP2C19 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11767398-B2 | Spin-on compositions comprising an inorganic oxide component and an alkynyloxy substituted spin-on carbon component useful as hard masks and filling materials with improved shelf life | MERCK PATENT GMBH (DE) | 2023-09-26 | — | — | US | disclosed |
| US-11767398-B2 | Spin-on compositions comprising an inorganic oxide component and an alkynyloxy substituted spin-on carbon component useful as hard masks and filling materials with improved shelf life | MERCK PATENT GMBH (DE) | 2023-09-26 | — | — | US | disclosed |
| CN-111804340-B | Method for preparing dibenzoxanthene derivative by catalysis of magnetic mesoporous polymeric ionic liquid | 曲阜师范大学 | 2022-05-27 | — | — | CN | disclosed |
| US-20220025109-A1 | SPIN-ON COMPOSITIONS COMPRISING AN INORGANIC OXIDE COMPONENT AND AN ALKYNYLOXY SUBSTITUTED SPIN-ON CARBON COMPONENT USEFUL AS HARD MASKS AND FILLING MATERIALS WITH IMPROVED SHELF LIFE | MERCK PERFORMANCE MATERIALS GERMANY GMBH (DE) | 2022-01-27 | — | — | US | disclosed |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-12 | — | — | US | disclosed |
| US-11137686-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-05 | — | — | US | disclosed |
| CN-111804340-A | Method for preparing dibenzoxanthene derivative by catalysis of magnetic mesoporous polymeric ionic liquid | 曲阜师范大学 | 2020-10-23 | — | — | CN | disclosed |
| US-20200144518-A1 | ORGANIC ELECTROLUMINESCENCE DEVICE AND POLYCYCLIC COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE | SAMSUNG DISPLAY CO., LTD. (KR) | 2020-05-07 | — | — | US | disclosed |
| EP-2739169-B1 | POROUS CATALYTIC MATRICES FOR ELIMINATION OF TOXICANTS FOUND IN TOBACCO COMBUSTION PRODUCTS | MASSACHUSETTS INST TECHNOLOGY (US) | 2019-06-12 | — | — | EP | disclosed |
| US-20190041750-A1 | MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-07 | — | — | US | disclosed |
| US-8846846-B2 | Naphthalene derivative, resist bottom layer material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-30 | — | — | US | disclosed |
| US-8795955-B2 | Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795955-B2 | Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795955-B2 | Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-20130032160-A1 | Porous Catalytic Matrices for Elimination of Toxicants Found in Tobacco Combustion Products | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2013-02-07 | — | — | US | disclosed |
| US-20120064725-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20120064725-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2011-12-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110311920-A1 | NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS | SMC1A, VCAM1, APOB | NPSR1 2172/4885CFTR 4390/4885GOPC 2616/4885 |
| US-20190041750-A1 | MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD | MLLT1, JMJD6, DOT1L | NPSR1 4579/4885CFTR 4282/4885GOPC 2485/4885 |
| US-11137686-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method | MLLT1, PRDM9, NAP1L1 | NPSR1 4116/4885CFTR 4014/4885GOPC 2248/4885 |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MLLT1, MLLT3, KDM2B | NPSR1 4355/4885CFTR 4230/4885GOPC 2509/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.