⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetramethylammonium Ion SCHEMBL2556543 | 1.00 | — | — | |
| Tetramethylammonium Ion SCHEMBL8116837 | 1.00 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL2556541 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL7710979 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL9850017 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL23832835 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL4151389 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL2111724 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL27855282 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL16825 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117246982-B | Lithium bis (fluorosulfonyl) imide and method for purifying lithium bis (fluorosulfonyl) imide | Shidai Sikang New Material Co.,Ltd. (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-117524975-A | Method for manufacturing semiconductor device | 南亚科技股份有限公司 | 2024-02-06 | — | — | CN | claimed |
| CN-117246982-A | Lithium bis (fluorosulfonyl) imide and method for purifying lithium bis (fluorosulfonyl) imide | 时代思康新材料有限公司 | 2023-12-19 | — | — | CN | claimed |
| CN-117089418-A | Substrate treatment composition and substrate treatment method using same | SK株式会社 | 2023-11-21 | — | — | CN | claimed |
| CN-114395767-A | Preparation method of sulfuryl fluoride by electrofluorination | 宁德时代新能源科技股份有限公司 | 2022-04-26 | — | — | CN | claimed |
| US-6462005-B1 | AQUEOUS SOLUTION CONTAINING A QUARTERNARY AMMONIUM SALT, A FLUORO COMPOUND AND OPTIONALLY AN ORGANIC SOLVENT; PROTECTING DEPOSITION FILM TO BE REMOVED; NO CORROSION OF CONDUCTIVE LAYER BEING DECONTAMINATED | TEXAS INSTRUMENTS INCORPORATED | 2002-10-08 | — | — | US | claimed |
| EP-0662705-B1 | Cleaning agent for semiconductor device and method for manufacturing semiconductor device | MITSUBISHI GAS CHEMICAL CO (JP) | 2000-08-23 | — | — | EP | claimed |
| EP-0662705-A2 | Cleaning agent for semiconductor device and method for manufacturing semiconductor device | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1995-07-12 | — | — | EP | claimed |
| CN-117089418-A | Substrate treatment composition and substrate treatment method using same | SK株式会社 | 2023-11-21 | — | — | CN | disclosed |
| CN-117025316-A | Substrate treatment composition and substrate treatment method using same | SK株式会社 | 2023-11-10 | — | — | CN | disclosed |
| US-10260153-B2 | Methods and compositions for acid treatment of a metal surface | HOUGHTON TECHNICAL CORP. (US) | 2019-04-16 | — | — | US | disclosed |
| US-20180002818-A1 | Methods and Compositions for Acid Treatment of a Metal Surface | BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT | 2018-01-04 | — | — | US | disclosed |
| US-9732428-B2 | Methods and compositions for acid treatment of a metal surface | HOUGHTON TECHNICAL CORP. (US) | 2017-08-15 | — | — | US | disclosed |
| US-20150329973-A1 | Methods and Compositions for Acid Treatment of a Metal Surface | BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT | 2015-11-19 | — | — | US | disclosed |
| US-20070066503-A1 | Methods and compositions for acid treatment of a metal surface | HOUGHTON TECHNICAL CORP. | 2007-03-22 | — | — | US | disclosed |
| WO-2007024556-A2 | METHODS AND COMPOSITIONS FOR ACID TREATMENT OF A METAL SURFACE | HOUGHTON METAL FINISHING COMPANY (US) | 2007-03-01 | — | — | WO | disclosed |
| US-6462005-B1 | AQUEOUS SOLUTION CONTAINING A QUARTERNARY AMMONIUM SALT, A FLUORO COMPOUND AND OPTIONALLY AN ORGANIC SOLVENT; PROTECTING DEPOSITION FILM TO BE REMOVED; NO CORROSION OF CONDUCTIVE LAYER BEING DECONTAMINATED | TEXAS INSTRUMENTS INCORPORATED | 2002-10-08 | — | — | US | disclosed |
| JP-2002038197-A | POLYMER REMOVER | SHIPLEY CO LLC | 2002-02-06 | — | — | JP | disclosed |
| EP-0662705-B1 | Cleaning agent for semiconductor device and method for manufacturing semiconductor device | MITSUBISHI GAS CHEMICAL CO (JP) | 2000-08-23 | — | — | EP | disclosed |
| EP-0662705-A2 | Cleaning agent for semiconductor device and method for manufacturing semiconductor device | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1995-07-12 | — | — | EP | disclosed |