Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL4151389

C[N+](C)(C)C.F.[H+]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117246982-A Lithium bis (fluorosulfonyl) imide and method for purifying lithium bis (fluorosulfonyl) imide 时代思康新材料有限公司 2023-12-19 CN claimed
CN-114395767-A Preparation method of sulfuryl fluoride by electrofluorination 宁德时代新能源科技股份有限公司 2022-04-26 CN claimed
EP-0662705-B1 Cleaning agent for semiconductor device and method for manufacturing semiconductor device MITSUBISHI GAS CHEMICAL CO (JP) 2000-08-23 EP claimed
EP-0662705-A2 Cleaning agent for semiconductor device and method for manufacturing semiconductor device MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1995-07-12 EP claimed
WO-2024029525-A1 METHOD FOR PRODUCING FLUORINATED ORGANIC COMPOUND ダイキン工業株式会社 2024-02-08 WO disclosed
CN-117025316-A Substrate treatment composition and substrate treatment method using same SK株式会社 2023-11-10 CN disclosed
EP-4265589-A1 METHOD FOR PRODUCING FLUORINATED ORGANIC COMPOUND DAIKIN INDUSTRIES, LTD. (JP) 2023-10-25 EP disclosed
US-20230322649-A1 METHOD FOR PRODUCING FLUORINATED ORGANIC COMPOUND DAIKIN INDUSTRIES, LTD. (JP) 2023-10-12 US disclosed
CN-116583494-A Process for producing fluorinated organic compound 大金工业株式会社 2023-08-11 CN disclosed
US-10260153-B2 Methods and compositions for acid treatment of a metal surface HOUGHTON TECHNICAL CORP. (US) 2019-04-16 US disclosed
US-20180002818-A1 Methods and Compositions for Acid Treatment of a Metal Surface BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT 2018-01-04 US disclosed
US-9732428-B2 Methods and compositions for acid treatment of a metal surface HOUGHTON TECHNICAL CORP. (US) 2017-08-15 US disclosed
US-8252195-B2 Methods and compositions for acid treatment of a metal surface HOUGHTON TECHNICAL CORP. (US) 2012-08-28 US disclosed
US-20090090635-A1 METHODS AND COMPOSITIONS FOR ACID TREATMENT OF A METAL SURFACE HOUGHTON METAL FINISHING COMPANY (US) 2009-04-09 US disclosed
EP-1931817-A2 METHODS AND COMPOSITIONS FOR ACID TREATMENT OF A METAL SURFACE Houghton Metal Finishing Company (US) 2008-06-18 EP disclosed
US-20070066503-A1 Methods and compositions for acid treatment of a metal surface HOUGHTON TECHNICAL CORP. 2007-03-22 US disclosed
WO-2007024556-A2 METHODS AND COMPOSITIONS FOR ACID TREATMENT OF A METAL SURFACE HOUGHTON METAL FINISHING COMPANY (US) 2007-03-01 WO disclosed
JP-2002038197-A POLYMER REMOVER SHIPLEY CO LLC 2002-02-06 JP disclosed
EP-0662705-B1 Cleaning agent for semiconductor device and method for manufacturing semiconductor device MITSUBISHI GAS CHEMICAL CO (JP) 2000-08-23 EP disclosed
EP-0662705-A2 Cleaning agent for semiconductor device and method for manufacturing semiconductor device MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1995-07-12 EP disclosed