SCHEMBL4165010

SCHEMBL4165010

C/C(=C\C1CCCCC1C)C(=O)O

nearest known ligand 0.41

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.41
GABRA1 P14867 1/20 0.41
TSHR P16473 1/20 0.41
GABRG2 P18507 1/20 0.41
RXRA P19793 1/20 0.41
GABRB3 P28472 1/20 0.41
RXRB P28702 1/20 0.41
GABRB2 P47870 1/20 0.41
RXRG P48443 1/20 0.41
EPHX1 P07099 2/20 0.36
TDP1 Q9NUW8 1/20 0.35
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA4 P22748 1/20 0.33
TAS1R3 Q7RTX0 1/20 0.31
TAS1R1 Q7RTX1 1/20 0.31
USP2 O75604 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL503447 1.00 ALDH1A1 (0.41) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL2219955 0.96 ALDH1A1 (0.41) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL10813263 0.85 ALDH1A1 (0.39) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL15673307 0.82 EPHX1 (0.38) EPHX1CA1CA2CA4TAS1R3
SCHEMBL2979621 0.80 ALDH1A1 (0.39) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL6824530 0.80 ALDH1A1 (0.39) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL7029721 0.78 ALDH1A1 (0.33) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL6075918 0.78 ALDH1A1 (0.33) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL7029719 0.78 ALDH1A1 (0.33) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL17420399 0.78 ALDH1A1 (0.35) ALDH1A1GABRA1TSHRGABRG2RXRA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8278021-B2 Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-10-02 US claimed
US-20090030103-A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-01-29 US claimed
EP-1244755-B1 PRESSURE SENSITIVE ADHESIVE AND BIOMEDICAL ELECTRODES USING SAME 3M INNOVATIVE PROPERTIES CO (US) 2006-01-18 EP claimed
EP-0835294-B1 LIGHT DIFFUSING ADHESIVE MINNESOTA MINING & MFG (US) 2003-01-29 EP claimed
US-9851635-B2 Photoresist composition and method of manufacturing substrate for display device by using the same SAMSUNG DISPLAY CO., LTD. (KR) 2017-12-26 US disclosed
CN-103732689-B Light-cured type organic inorganic hybridization resin combination DONGJIN SEMICHEM CO.,LTD. (KR) 2016-05-18 CN disclosed
US-20160018731-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SUBSTRATE FOR DISPLAY DEVICE BY USING THE SAME MERCK PATENT GMBH (DE) 2016-01-21 US disclosed
US-20140139785-A1 TWO-WAY DISPLAY DEVICE AND METHOD OF DRIVING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2014-05-22 US disclosed
US-8519408-B2 Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate SAMSUNG DISPLAY CO., LTD. (KR) 2013-08-27 US disclosed
US-20120328991-A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-12-27 US disclosed
US-8278021-B2 Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-10-02 US disclosed
US-20090030103-A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-01-29 US disclosed
US-6200725-B1 A SUBSTITUTED ALICYCLIC HYDROCARBON GROUP WHICH ACTS AS A PROTECTIVE GROUP TO AN ADDITIONAL POLYMER WHEN EXPOSED TO A POLYACID GENERATOR WHICH IS CAPABLE OF DECOMPOSING TO PATTERN RADIATION EPOSURE, PRODUCES ACID, CAPABLE OF DEPROTECTION FUJITSU LIMITED (JP) 2001-03-13 US disclosed
US-6013416-A FILMS FOR PHOTORESISTS PATTERNS FUJITSU LIMITED (JP) 2000-01-11 US disclosed
US-5968713-A ALKALI DEVELOPED RESISTS AND FILM FORMING COMPOUNDS WITH ALKALI SOLUBLE GROUPS AND GENERATION FUJITSU LIMITED (JP) 1999-10-19 US disclosed
EP-0181281-B1 FLUOROALKYLCARBAMYL ACRYLATES AND METHACRYLATES CIBA-GEIGY AG (CH) 1989-03-08 EP disclosed
EP-0177447-B1 DIPERFLUOROALKYL CARBAMYL ACRYLATES AND METHACRYLATES CIBA-GEIGY AG (CH) 1987-08-19 EP disclosed
EP-0190993-A2 Perfluoroalkylsulfonoalkyl acrylates and methacrylates, process for their preparation and their use CIBA-GEIGY AG (CH) 1986-08-13 EP disclosed
EP-0181281-A1 Fluoroalkylcarbamyl acrylates and methacrylates CIBA-GEIGY AG (CH) 1986-05-14 EP disclosed
EP-0177447-A1 Diperfluoroalkyl carbamyl acrylates and methacrylates CIBA-GEIGY AG (CH) 1986-04-09 EP disclosed