SCHEMBL4229062

SCHEMBL4229062

[Sc].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4229067 1.00
SCHEMBL30497484 0.82
SCHEMBL30449684 0.82
SCHEMBL28318598 0.82
Lithium SCHEMBL31711416 0.82
Water SCHEMBL23039390 0.82
Nitrogen SCHEMBL461636 0.82
SCHEMBL38650653 0.82
SCHEMBL21244060 0.82
SCHEMBL31348840 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119800071-A Method for processing battery black powder and cobalt nickel hydroxide in parallel 宁波容百新能源科技股份有限公司 2025-04-11 CN claimed
CN-117507442-B Manufacturing method of double-sided tooth synchronous belt 宁波伏龙同步带有限公司 2024-06-14 CN claimed
CN-117487346-B Wheel lining and preparation method thereof 宁波伏龙同步带有限公司 2024-06-14 CN claimed
CN-117507442-A Manufacturing method of double-sided tooth synchronous belt 宁波伏龙同步带有限公司 2024-02-06 CN claimed
CN-117487346-A Wheel lining and preparation method thereof 宁波伏龙同步带有限公司 2024-02-02 CN claimed
CN-117004992-B Preparation method of high-strength graphite anode 鞍山炭素有限公司 2024-01-26 CN claimed
CN-117004992-A Preparation method of high-strength graphite anode 鞍山炭素有限公司 2023-11-07 CN claimed
CN-116793491-A Single-grating three-level simultaneous diffraction solar ultraviolet snapshot imaging spectrometer 北京理工大学 2023-09-22 CN claimed
CN-116793492-A Solar ultraviolet tertiary slit-free imaging spectrometer with two-dimensional dispersion 北京理工大学 2023-09-22 CN claimed
EP-4621828-A1 METHOD FOR FORMING A CONTACT FOR A SEMICONDUCTOR DEVICE, AND A CONTACT FOR A SEMICONDUCTOR DEVICE Imec VZW (BE) 2025-09-24 EP disclosed
CN-119800071-A Method for processing battery black powder and cobalt nickel hydroxide in parallel 宁波容百新能源科技股份有限公司 2025-04-11 CN disclosed
CN-117507442-B Manufacturing method of double-sided tooth synchronous belt 宁波伏龙同步带有限公司 2024-06-14 CN disclosed
CN-117507442-B Manufacturing method of double-sided tooth synchronous belt 宁波伏龙同步带有限公司 2024-06-14 CN disclosed
CN-117487346-B Wheel lining and preparation method thereof 宁波伏龙同步带有限公司 2024-06-14 CN disclosed
CN-103352131-A Method for scandium concentration from complex high-acidity scandium contained solution UNIV INNER MONGOLIA SCI & TECH 2013-10-16 CN disclosed
CN-103042612-A Solar energy crystalline silicon wire-electrode cutting mortar ZHAO JUNYONG 2013-04-17 CN disclosed
CN-102312090-A Process for extracting scandium from ore containing scandium through pressure leaching JILIN JIEN NICKEL INDUSTRY CO LTD 2012-01-11 CN disclosed
US-7482677-B2 Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-01-27 US disclosed
US-20060244147-A1 Dielectric structures having high dielectric constants, methods of forming the dielectric structures, non-volatile semiconductor memory devices having the dielectric structures and methods of manufacturing the non-volatile semiconductor memory devices SAMSUNG ELECTRONICS CO., LTD. 2006-11-02 US disclosed
EP-0793679-B1 ETHYLENE HOMOPOLYMERIZATION USING GROUP 3 METAL COMPLEXES DOW CHEMICAL CO (US) 1998-11-25 EP disclosed