⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4229062 | 1.00 | — | — | |
| SCHEMBL30497484 | 0.82 | — | — | |
| SCHEMBL30449684 | 0.82 | — | — | |
| SCHEMBL28318598 | 0.82 | — | — | |
| Lithium SCHEMBL31711416 | 0.82 | — | — | |
| Water SCHEMBL23039390 | 0.82 | — | — | |
| Nitrogen SCHEMBL461636 | 0.82 | — | — | |
| SCHEMBL38650653 | 0.82 | — | — | |
| SCHEMBL21244060 | 0.82 | — | — | |
| SCHEMBL31348840 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117706810-A | Mixed non-etching scandium-doped aluminum nitride electro-optical modulator and preparation method thereof | 上海大学 | 2024-03-15 | — | — | CN | claimed |
| CN-117004992-B | Preparation method of high-strength graphite anode | 鞍山炭素有限公司 | 2024-01-26 | — | — | CN | claimed |
| CN-117004992-A | Preparation method of high-strength graphite anode | 鞍山炭素有限公司 | 2023-11-07 | — | — | CN | claimed |
| EP-4621828-A1 | METHOD FOR FORMING A CONTACT FOR A SEMICONDUCTOR DEVICE, AND A CONTACT FOR A SEMICONDUCTOR DEVICE | Imec VZW (BE) | 2025-09-24 | — | — | EP | disclosed |
| CN-117487346-B | Wheel lining and preparation method thereof | 宁波伏龙同步带有限公司 | 2024-06-14 | — | — | CN | disclosed |
| CN-117706810-A | Mixed non-etching scandium-doped aluminum nitride electro-optical modulator and preparation method thereof | 上海大学 | 2024-03-15 | — | — | CN | disclosed |
| CN-117706810-A | Mixed non-etching scandium-doped aluminum nitride electro-optical modulator and preparation method thereof | 上海大学 | 2024-03-15 | — | — | CN | disclosed |
| CN-117026190-B | Preparation method for inhibiting embrittlement of extreme ultraviolet scandium-based multilayer film | 同济大学 | 2024-02-23 | — | — | CN | disclosed |
| CN-117487346-A | Wheel lining and preparation method thereof | 宁波伏龙同步带有限公司 | 2024-02-02 | — | — | CN | disclosed |
| CN-117004992-B | Preparation method of high-strength graphite anode | 鞍山炭素有限公司 | 2024-01-26 | — | — | CN | disclosed |
| CN-117026190-A | Preparation method for inhibiting embrittlement of extreme ultraviolet scandium-based multilayer film | 同济大学 | 2023-11-10 | — | — | CN | disclosed |
| CN-117004992-A | Preparation method of high-strength graphite anode | 鞍山炭素有限公司 | 2023-11-07 | — | — | CN | disclosed |
| CN-116540426-A | Mid-infrared electric light modulator and preparation method thereof | 上海大学 | 2023-08-04 | — | — | CN | disclosed |
| CN-103042612-A | Solar energy crystalline silicon wire-electrode cutting mortar | ZHAO JUNYONG | 2013-04-17 | — | — | CN | disclosed |
| US-7482677-B2 | Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-01-27 | — | — | US | disclosed |
| US-20060244147-A1 | Dielectric structures having high dielectric constants, methods of forming the dielectric structures, non-volatile semiconductor memory devices having the dielectric structures and methods of manufacturing the non-volatile semiconductor memory devices | SAMSUNG ELECTRONICS CO., LTD. | 2006-11-02 | — | — | US | disclosed |