⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL306180 | 0.77 | — | — | |
| SCHEMBL4077039 | 0.72 | — | — | |
| SCHEMBL8851739 | 0.72 | ALDH1A1 (0.30) | — | |
| SCHEMBL302653 | 0.70 | TSHR (0.35) | — | |
| SCHEMBL3768456 | 0.70 | — | — | |
| SCHEMBL5412419 | 0.67 | — | — | |
| SCHEMBL17889228 | 0.66 | — | — | |
| SCHEMBL44443 | 0.65 | — | — | |
| SCHEMBL27882952 | 0.65 | — | — | |
| SCHEMBL5413077 | 0.63 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7604911-B2 | Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-10-20 | — | — | US | disclosed |
| US-20080076255-A1 | MASK PATTERN FOR SEMICONDUCTOR DEVICE FABRICATION, METHOD OF FORMING THE SAME, METHOD FOR PREPARING COATING, COMPOSITION FOR FINE PATTERN FORMATION, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE | HATA MITSUHIRO | 2008-03-27 | — | — | US | disclosed |
| US-7314691-B2 | Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-01 | — | — | US | disclosed |
| US-20050227151-A1 | Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. | 2005-10-13 | — | — | US | disclosed |