Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GAA | P10253 | 3/20 | 0.48 |
| ▸ | MGAM | O43451 | 2/20 | 0.48 |
| ▸ | SI | P14410 | 2/20 | 0.48 |
| ▸ | MGAM2 | Q2M2H8 | 2/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.44 |
| ▸ | TSHR | P16473 | 3/20 | 0.39 |
| ▸ | HPGD | P15428 | 1/20 | 0.39 |
| ▸ | FAAH | O00519 | 1/20 | 0.38 |
| ▸ | ATM | Q13315 | 2/20 | 0.37 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.36 |
| ▸ | NAAA | Q02083 | 1/20 | 0.36 |
| ▸ | DGKA | P23743 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.35 |
| ▸ | CES2 | O00748 | 1/20 | 0.35 |
| ▸ | ACHE | P22303 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL425167 | 0.89 | GAA (0.52) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL21753733 | 0.87 | MGAM (0.54) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL21543979 | 0.85 | MGAM (0.58) | GAAMGAMSIMGAM2ALDH1A1 | |
| Acetic Acid Butyl Ester SCHEMBL29539673 | 0.84 | ALDH1A1 (0.67) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL2590661 | 0.83 | GAA (0.58) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL487722 | 0.82 | GAA (0.48) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL431559 | 0.82 | GAA (0.48) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL27734875 | 0.82 | GAA (0.48) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL453161 | 0.82 | GAA (0.48) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL1361380 | 0.82 | GAA (0.48) | GAAMGAMSIMGAM2ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114502629-B | Safety tyre | 株式会社普利司通 | 2024-12-24 | — | — | CN | disclosed |
| US-20220155688-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-05-19 | — | — | US | disclosed |
| US-20210124266-A1 | PRIMER FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING A PATTERN | NISSAN CHEMICAL CORPORATION (JP) | 2021-04-29 | — | — | US | disclosed |
| US-10886072-B2 | Method for producing photoelectric conversion element | SHARP KABUSHIKI KAISHA (JP) | 2021-01-05 | — | — | US | disclosed |
| US-20200225584-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2020-07-16 | — | — | US | disclosed |
| US-10613440-B2 | Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-04-07 | — | — | US | disclosed |
| US-20190348226-A1 | METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT | SHARP KABUSHIKI KAISHA (JP) | 2019-11-14 | — | — | US | disclosed |
| US-9627217-B2 | Silicon-containing EUV resist underlayer film-forming composition including additive | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-04-18 | — | — | US | disclosed |
| US-9196484-B2 | Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-24 | — | — | US | disclosed |
| US-20150210829-A1 | SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ONIUM SULFONATE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-07-30 | — | — | US | disclosed |
| EP-1298176-A2 | Stacked film insulating film and substrate for semiconductor | JSR Corporation (JP) | 2003-04-02 | — | — | EP | disclosed |
| US-20030059550-A1 | Method of film formation, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| US-20030059628-A1 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| EP-1296365-A2 | Method of film formation, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| EP-1295924-A2 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| US-20030008155-A1 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2003-01-09 | — | — | US | disclosed |
| EP-1267395-A2 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR Corporation (JP) | 2002-12-18 | — | — | EP | disclosed |
| US-6472079-B2 | PRODUCT OF HYDROLYSIS AND CONDENSATION OF AN ORGANOSILICON COMPOUND; 1A OR 2A COMPOUND, ESPECIALLY CARBOXYLIC SALT; SOLVENT; EXCELLENT CRACKING RESISTANCE AFTER A PCT (PRESSURE COOKER TEST). | JSR CORPORATION (JP) | 2002-10-29 | — | — | US | disclosed |
| US-20020045693-A1 | Composition for film formation, method of film formation and silica-based film | JSR CORPORATION (JP) | 2002-04-18 | — | — | US | disclosed |
| EP-1148105-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-24 | — | — | EP | disclosed |